|Category||Discrete => Diodes & Rectifiers => Switching Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA4X194MA194 datasheet
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Power dissipation Junction temperature Storage temperature Note) Single Double Single Double Single Double
Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) Terminal capacitance Forward dynamic resistance Reverse recovery f* 2 trr = 1 MHz = 3 mA, = 30 MHz = 3 mA, = 30 MHz = 10 mA, 6 V Irr = 0.1 IR, RL Conditions Min Typ Max ns Unit V pF
Note) : rf measuring instrument: Nihon Koshuha Model : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit Bias Application Unit N-50BU Input PulseNote) The part number in the parenthesis shows conventional part number.
Short reverse recovery time trr Two isolated elements contained in one package, allowing highdensity mounting
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA4X348 Marking = M1S ;; VR(V) = 15 ;; IF(mA) = ;; Package = Mini4-G1|
|MA4X713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA4X714 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA4X724 VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini4-G1|
|MA4X726 VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini4-G1|
|MA4X746 VRM(V) = 50 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 200 ;; Package = Mini4-G1|
|MA4X796 VRM(V) = 50 ;; IF(mA) = 100 ;; VFmax.(V) = 0.55 ;; IR(µA) = 30 ;; Package = Mini4-G1|
|MA4X862 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini4-G1|
|MA4Z082WA Silicon Planer Type, Zener Diode|
|MA4Z159 Marking = M1B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini4-F1|
|MA4Z713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini4-F1|
|MA4ZD03 VRM(V) = 45 ;; IF(mA) = 100 ;; VFmax.(V) = 0.6 ;; IR(µA) = 5 ;; Package = SMini4-F1|
|MA4ZD14 VRM(V) = 20 ;; IF(mA) = 100 ;; VFmax.(V) = 0.4 ;; IR(µA) = 20 ;; Package = SMini4-F1|
|MA551 Marking = MY ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA555 Marking = M2H ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
APT20M11JVR : . Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source.
BC847U : Small Signal Transistor, General Purpose Bipolar Transistor. Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector.
FS20SM-6 : Type = Planar Process=>200V ;; Voltage = 300V ;; Rdson = 260 ;; Package = Obsolete ;; Drive Voltage = N/a.
KSC2330 : NPN Epitaxial Silicon Transistor. Collector-Base Voltage : VCBO=300V Current Gain Bandwidth Product : fT=50MHz (TYP.) Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings Units.
NTE2409 : Silicon PNP Transistor. General Purpose Amp, Surface Mount (compl to NTE2408)..
SDS2836F : Diode , General Switching Diode. SMD package : SOT-23F Low forward voltage : VF=0.9V(Typ.) Fast reverse recovery time : trr=1.6ns(Typ.) Small total capacitance : CT=2.2pF(Typ.) Ultra high speed Maximum(peak) reverse voltage Reverse voltage Maximum(peak) forward current Average forward current Surge current(10ms) Power dissipation Junction temperature Storage temperature * : Unit ratings.
ESM4045AV : 42 A, 450 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN.
RFM00U7U : UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; Package Type: USQ, 2-2K1D, 4 PIN ; Number of units in IC: 1.
SBR12U100P5-13 : 12 A, 100 V, SILICON, RECTIFIER DIODE. s: Package: GREEN, PLASTIC, POWERDI5, 3 PIN ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 12000 mA.
SHD426301 : 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257AA. s: Polarity: NPN ; Package Type: HERMETIC SEALED, TO-257, 3 PIN.
163CNQ100PBF : 160 A, 100 V, SILICON, RECTIFIER DIODE, TO-249AA. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 160000 mA ; RoHS Compliant: RoHS ; Pin Count: 3 ; Number of Diodes: 2.
1H104 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 100000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole ; Resistance Range: 100000 ohms ; Operating Temperature: -40 to 300 C (-40 to 572 F).
1N4678-1 : 1.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH. s: Diode Type: VOLTAGE REGULATOR DIODE.
2N5339LCC4E4 : 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: HERMETIC SEALED, CERAMIC, LCC4-18.
6TQ35 : 6 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 6000 mA ; Pin Count: 3 ; Number of Diodes: 2.