|Category||Discrete => Diodes & Rectifiers => Schottky Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA4X713MA713 datasheet
Two isolated elements are contained in one package, allowing high-density mounting Two (MA704A) is contained in one package (of a type in the same direction) Low forward voltage VF , optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) Mini type 4-pin package
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double * Single Double Junction temperature Storage temperature Note) Value per chip
Parameter Reverse current (DC) Forward voltage (DC) Symbol VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. trr measuring instrumentBias Application Unit tr 10% Input Pulse t IF trr t Irr = 100 Output Pulse
Note) The part number in the parenthesis shows conventional part number.
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA4X714 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA4X724 VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini4-G1|
|MA4X726 VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini4-G1|
|MA4X746 VRM(V) = 50 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 200 ;; Package = Mini4-G1|
|MA4X796 VRM(V) = 50 ;; IF(mA) = 100 ;; VFmax.(V) = 0.55 ;; IR(µA) = 30 ;; Package = Mini4-G1|
|MA4X862 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini4-G1|
|MA4Z082WA Silicon Planer Type, Zener Diode|
|MA4Z159 Marking = M1B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini4-F1|
|MA4Z713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini4-F1|
|MA4ZD03 VRM(V) = 45 ;; IF(mA) = 100 ;; VFmax.(V) = 0.6 ;; IR(µA) = 5 ;; Package = SMini4-F1|
|MA4ZD14 VRM(V) = 20 ;; IF(mA) = 100 ;; VFmax.(V) = 0.4 ;; IR(µA) = 20 ;; Package = SMini4-F1|
|MA551 Marking = MY ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA555 Marking = M2H ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA556 Marking = M2T ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini6-G1|
|MA557 Marking = M3O ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA558 Marking = M4C ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
LN534RKMR : Numerical Display Devices Numeric Size (mm) = 11 ;; Numeric Size (inch) = 0.4 ;; Element = 3 ;; Brightness = ;; Lighting Color = Green ;; Common Terminal = Anode ;; Remarks = ;; Package =
UNR9215J : RETs (Resistor Equipped transistors) Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
EEUFC1J121B : Aluminum Electrolytic Capacitors/fc
MAZ33000H : Silicon Planar type
EEE-FK1H4R7R : 4.7µF Aluminum Capacitor Radial, Can - SMD 50V; CAP ALUM 4.7UF 50V 20% SMD Specifications: Capacitance: 4.7µF ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 2000 Hrs @ 105°C ; Size / Dimension: 0.157" Dia (4.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.169" L x 0.169" W (4.30mm x 4.30mm) ; Mounting Type: Surface Mount ; Pack
ECQ-P1H101JZ3 : 100pF Film Capacitor Radial; CAP FILM 100PF 50VDC RADIAL Specifications: Capacitance: 100pF ; Tolerance: ±5% ; Dielectric Material: Polypropylene ; Package / Case: Radial ; Packaging: Tape & Box (TB) ; Lead Spacing: 0.197" (5.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: High Frequency and High Stability ; Lea
ECW-H16202RJV : 2000pF Film Capacitor Radial; CAP FILM 2000PF 1.6KVDC RADIAL Specifications: Capacitance: 2000pF ; Tolerance: ±5% ; Dielectric Material: Polypropylene, Metallized ; Package / Case: Radial ; Packaging: Tape & Box (TB) ; Lead Spacing: 0.295" (7.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: High Frequency and High St
ERJ-3EKF5620V : 562 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 562 OHM 1/10W 1% 0603 SMD Specifications: Resistance (Ohms): 562 ; Power (Watts): 0.1W, 1/10W ; Tolerance: ±1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERJ-S02J164X : 160K Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES ANTI-SULFUR 160K OHM 5% 0402 Specifications: Resistance (Ohms): 160K ; Power (Watts): 0.1W, 1/10W ; Tolerance: ±5% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±200ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
PM-R65 : SENSOR SLOT NPN Panasonic introduces their U-shaped micro photoelectric sensors. One step ahead in performance and mounting ease. The large operation indicator (orange) lights up when the beam enters. The indicator is easy to see from above and from the sides. The beam emitting and receiving sections are 0.5 mm
2N4902 : 60V PNP Complementary Silicon Power Transistor.
AD4C211-H : MOS Output SSRs. 400V, 150mA, 20 Ohms. Dual 1 Form A Solid State Relay The is a bi-directional, double-pole, single-throw, normally open multipurpose solid-state relay. It is designed to replace electromechanical relays in general purpose switching applications. The relay consists of two integrated circuits, each driving a pair of rugged source-to-source enhancement type DMOS transistors.
CV7673-O : Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 40V ;; IC(cont) = 0.6A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 10V / 150mA ;; FT = 200MHz ;; PD = 0.4W.
HFB50HI20 : 200V 50A Hi-rel Ultra-fast Discrete Diode in a TO-259AA Package. Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations.
MJE181 : NPN Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current High Speed Switching Applications Absolute Maximum Ratings TC=25°C unless otherwise noted Collector-Emitter Voltage : MJE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature.
NTE195A : Silicon NPN Transistor. RF Power Amp/driver, CB.. : The NTE195A is designed primarily for use in largesignal output amplifier stages. Intended for use in CitizenBand communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of upmodulation in AM circuits. : D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute.
SPB20N60C3SMD : . Feature=New revolutionary high voltage technology Worldwide best R DS(on) TO 220 Ultra low gate charge=Periodic avalanche rated Extreme dv/dt rated=High peak current capability=Improved transconductance=150 °C operating temperature Maximum Ratings, = 25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current, tp limited.
ZXTDA1M832 : NPN & PNP Low Sat Transistor. MPPSTM Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Packaged in the new innovative x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions.
03028BX471AKU : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.00047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 4.70E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
HM65-H1R8LFTR : 1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, High Current ; Inductance Range: 1.8 microH ; Operating Temperature: -40 to 130 C (-40 to 266 F).
IRF4104GPBF : 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0055 ohms ; Package Type: HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3 ; Number of units in IC: 1.
SKKQ360/18 : 1800 V, SCR. s: Thyristor Type: SCR ; Package Type: SEMISTACK, 4 PIN ; Pin Count: 4 ; VDRM: 1800 volts ; VRRM: 1800 volts.
TCTOM1A225M8R : CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 10 V, 2.2 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 2.2 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 2.2 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size:.
ZDX1FKSTOA : 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 250 mA ; Package: TO-92 STYLE, E-LINE PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.