|Category||Discrete => Diodes & Rectifiers => Schottky Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA4X714MA714 datasheet
Two isolated elements are contained in one package, allowing high-density mounting Two (MA704A) is contained in one package (two diodes in a different direction) Low forward voltage VF , optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) Mini type 4-pin package
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double * Single Double Junction temperature Storage temperature Note) Value per chip
Parameter Reverse current (DC) Forward voltage (DC) Symbol VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. trr measuring instrumentBias Application Unit tr 10% Input Pulse t IF trr t Irr = 100 Output Pulse
Note) The part number in the parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA4X724 VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini4-G1|
|MA4X726 VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini4-G1|
|MA4X746 VRM(V) = 50 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 200 ;; Package = Mini4-G1|
|MA4X796 VRM(V) = 50 ;; IF(mA) = 100 ;; VFmax.(V) = 0.55 ;; IR(µA) = 30 ;; Package = Mini4-G1|
|MA4X862 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini4-G1|
|MA4Z082WA Silicon Planer Type, Zener Diode|
|MA4Z159 Marking = M1B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini4-F1|
|MA4Z713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini4-F1|
|MA4ZD03 VRM(V) = 45 ;; IF(mA) = 100 ;; VFmax.(V) = 0.6 ;; IR(µA) = 5 ;; Package = SMini4-F1|
|MA4ZD14 VRM(V) = 20 ;; IF(mA) = 100 ;; VFmax.(V) = 0.4 ;; IR(µA) = 20 ;; Package = SMini4-F1|
|MA551 Marking = MY ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA555 Marking = M2H ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA556 Marking = M2T ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini6-G1|
|MA557 Marking = M3O ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA558 Marking = M4C ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA57 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA5J002D Marking = M5C ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 50 ;; Package = SMini5-F1|
BDX63 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 80V ;; IC(cont) = 8A ;; HFE(min) = 1000 ;; HFE(max) = - ;; @ Vce/ic = 3V / 3A ;; FT = 7MHz ;; PD = 90W.
DTC323T : Digital Transistor (built-in Resistors).
EXB840 : Igbt-driving Hydrid ic.
IRGPC40M : Medium Voltage 600-1199 Volts. Insulated Gate Bipolar Transistor Short Circuit Rated Fast Igbt.
MBR1035 : Pakage = TO-220A ;; Max. Reverse Voltage VRM (V)= 35 ;; Max. Aver. Rect. Current io (A)= 10 ;; Ifsm (A)= 150.
SK12 : Schottky Rectifiers.
SPB73N03S2L-08 : E.g. OptiMOS®. Feature Enhancement mode Logic Level Excellent Gate Charge x RDS(on) TO262 -3-1 175°C operating temperature Avalanche rated dv/dt rated Maximum Ratings, = 25 °C, unless otherwise specified Symbol SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:.
CTA08 : Triacs 8A Triacs • 8A • 400V - 1000V • Isolated and non-isolated • Types: Logic level, alternistor (No snubber) and standard (Four quadrant triggering).
AMK212BJ226KD-T : CAPACITOR, CERAMIC, MULTILAYER, 4 V, X5R, 22 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 22 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 4 volts ; Mounting Style: Surface.
AP11N50I : 11 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.6200 ohms ; Package Type: TO-220, ROHS COMPLIANT, TO-220CFM, 3 PIN ; Number of units in IC: 1.
FW513 : 0.35 A, 600 V, 7.6 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 7.6 ohms ; Package Type: SC-87, SOP-8 ; Number of units in IC: 1.
GUS-QS0BLF-02-1021-F : RESISTOR, NETWORK, FILM, BUSSED, 1 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), QSOP, ROHS COMPLIANT ; Tolerance: 1 +/- % ; Temperature Coefficient: 50 Â±ppm/Â°C ; Power Rating: 1 watts (0.0013 HP) ; Operating DC Voltage: 100 volts ; Number of Resistors:.
IRKNF200-08HK : 444 A, 800 V, SCR. s: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 444 amps ; IGT: 200 mA ; Package Type: MAGN-A-PAK-5 ; Pin Count: 5.
S841TG-1149 : 12 V DC, INVERTER TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Inverter Transformer ; Mounting: Chip Transformer ; Input Voltage: 12 volts ; Output Voltage: 1200 volts.
TK8A65D : 8 A, 650 V, 0.84 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 650 volts ; rDS(on): 0.8400 ohms ; Package Type: ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN ; Number of units in IC: 1.
2SB1124R : 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: PCP, 3 PIN.