|Category||Discrete => Diodes & Rectifiers => Schottky Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA4X746MA746 datasheet
For super high speed switching For small current rectification I Features
Two isolated elements are contained in one package, allowing high-density mounting IF(AV) 200 mA and 50 V are achieved Optimum for high frequency rectification because of its short reverse recovery time (trr) Low forward voltage VF and good rectification efficiency Mini type 4-pin package
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Non-repetitive peak Single forward-surge-current *2 Double *1 Peak forward current Average forward current Single Double *1 Single Double *1Note) *1: Value per chip *2: The peak-to-peak value in one cycle 50 Hz sine wave (non-repetitive)
Parameter Reverse current (DC) Forward voltage (DC) Symbol VF1 VF2 Terminal capacitance Reverse recovery time * Ct trr = 1 MHz 100 mA Irr = 10 mA, RL Conditions Min Typ Max pF ns Unit µA V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. trr measuring instrumentBias Application Unit tr 10% Input Pulse t IF trr t Irr = 100 Output Pulse
Note) The part number in the parenthesis shows conventional part number.
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA4X796 VRM(V) = 50 ;; IF(mA) = 100 ;; VFmax.(V) = 0.55 ;; IR(µA) = 30 ;; Package = Mini4-G1|
|MA4X862 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini4-G1|
|MA4Z082WA Silicon Planer Type, Zener Diode|
|MA4Z159 Marking = M1B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini4-F1|
|MA4Z713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini4-F1|
|MA4ZD03 VRM(V) = 45 ;; IF(mA) = 100 ;; VFmax.(V) = 0.6 ;; IR(µA) = 5 ;; Package = SMini4-F1|
|MA4ZD14 VRM(V) = 20 ;; IF(mA) = 100 ;; VFmax.(V) = 0.4 ;; IR(µA) = 20 ;; Package = SMini4-F1|
|MA551 Marking = MY ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA555 Marking = M2H ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA556 Marking = M2T ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini6-G1|
|MA557 Marking = M3O ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA558 Marking = M4C ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA57 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini3-G1|
|MA5J002D Marking = M5C ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 50 ;; Package = SMini5-F1|
|MA5J002E Marking = M5B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 0.1 ;; Trr(ns) = 3 ;; Package = SMini5-F1|
|MA649 Fast Recovery Diode (frd) Silicon Planer Type (cathode Common)|
|MA655 VRSM(V) = 300 ;; VRRM(V) = 300 ;; IF(A) = 20 ;; VF(V) = 1 ;; Trr(ns) = 50 ;; Package = TOP-3F-A1TOP-3F-B1|
|MA695 VRSM(V) = 400 ;; VRRM(V) = 400 ;; IF(A) = 20 ;; VF(V) = 1 ;; Trr(ns) = 100 ;; Package = TOP-3F-A1|
BCW69 : BCW69; BCW70; PNP General Purpose Transistors;; Package: SOT23 (SST3).
BSP299 : Sipmos(r) Small-signal Transistor: 500v, 0.4a. SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Maximum Ratings Parameter Continuous drain current Symbol Values 0.4 Unit A Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering.
IRFM360 : 400V Single N-channel Hi-rel MOSFET in a TO-254AA Package. HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling.
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SD3553C-S20R : Fast Recovery Diodes. High power FAST rectifier diode series 2.0 µs recovery time High voltage ratings 2500 V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style B-44 (R-PUK) Maximum junction temperature 125°C Typical Applications Snubber diode for GTO High voltage free-wheeling.
SEP100-S : Magnetic components. complies with ANSI and ETSI requirements matched to Infineons & PEF24622 chipsets very low THD 2000V minimum isolation all materials approved to UL94V-0 excellent quality at competitive price due to high volume production manufactured in ISO-9001 approved Talema facility Part N umber SEP100-T SEP100-S Turns R atio ± 2% Line IC : Sense TH SMD LP (mH LL (µH ) Max.
UF5400 : Low Power Rectifier. Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack see page 17 siehe Seite 17 Maximum ratings Type Typ UF 5408 Repetitive.
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CBD20120LFCT : 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 10000 mA ; Package: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.
CEN-U05LEADFREE : 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-202. s: Polarity: NPN ; Package Type: TO-202, TO-202, 3 PIN.
D1084UKR3 : VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 70 volts ; Package Type: PLASTIC PACKAGE-3 ; Number of units in IC: 1.
EPZ100010 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 10 volts ; Mounting Style: Through Hole.
LMS-R100-5.0 : RES,SMT,METAL ALLOY,100M OHMS,5% +/-TOL,50PPM TC,2512 CASE. s: Category / Application: Current Sensing, General Use.
PMZB420UN : SMALL SIGNAL, FET. N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height Relay driver High-speed line driver Low-side loadswitch Switching.
UPA1818GR-9JG-A : 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0250 ohms ; Package Type: POWER, TSSOP-8 ; Number of units in IC: 1.
2N4033CSM4G4 : 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: CERAMIC, LCC-4.
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