|Category||Discrete => Diodes & Rectifiers => Switching Diodes|
|Description||Marking = M5C ;; V<SUB>R</SUB>(V) = 80 ;; I<SUB>F</SUB>(mA) = 100 ;; I<SUB>R</SUB>(nA) = 100 ;; T<SUB>rr</SUB>(ns) = 50 ;; Package = SMini5-F1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA5J002D datasheet
|Cross ref.||Similar parts: HN4D01JU|
S-Mini type 5-pin package Includes 4 elements of annode common connection Parts reduction is possible Ideal for surge voltage absorptionReverse voltage (DC) Peak reverse voltage Forward current (DC)
Peak forward current *1 Non-repetitive peak forwardsurge-current *1, 2 Junction temperature Storage temperature Note) *1: Value per a diode *2:
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time * Symbol VR Ct trr = 1 MHz = 10 mA, 6 V Irr , RL Conditions Min Typ Max 100 1.3 Unit pF nsNote) 1. Rated input/output frequency: 100 MHz * : trr measuring instrument
Bias Application Unit tr 10% Input Pulse t IF trr t Irr = 100 Output Pulse
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA5J002E Marking = M5B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 0.1 ;; Trr(ns) = 3 ;; Package = SMini5-F1|
|MA649 Fast Recovery Diode (frd) Silicon Planer Type (cathode Common)|
|MA655 VRSM(V) = 300 ;; VRRM(V) = 300 ;; IF(A) = 20 ;; VF(V) = 1 ;; Trr(ns) = 50 ;; Package = TOP-3F-A1TOP-3F-B1|
|MA695 VRSM(V) = 400 ;; VRRM(V) = 400 ;; IF(A) = 20 ;; VF(V) = 1 ;; Trr(ns) = 100 ;; Package = TOP-3F-A1|
|MA6D49 VRSM(V) = 200 ;; VRRM(V) = 200 ;; IF(A) = 5 ;; VF(V) = 0.98 ;; Trr(ns) = 30 ;; Package = TO-220D-A1|
|MA6D50 VRSM(V) = 200 ;; VRRM(V) = 200 ;; IF(A) = 10 ;; VF(V) = 0.98 ;; Trr(ns) = 30 ;; Package = TO-220D-A1|
|MA6D52 VRSM(V) = 200 ;; VRRM(V) = 200 ;; IF(A) = 20 ;; VF(V) = 1 ;; Trr(ns) = 70 ;; Package = TO-220D-A1|
|MA6D53 VRSM(V) = 300 ;; VRRM(V) = 300 ;; IF(A) = 5 ;; VF(V) = 0.98 ;; Trr(ns) = 50 ;; Package = TO-220D-A1|
|MA6D54 VRSM(V) = 300 ;; VRRM(V) = 300 ;; IF(A) = 10 ;; VF(V) = 0.98 ;; Trr(ns) = 50 ;; Package = TO-220D-A1|
|MA6D89 VRSM(V) = 200 ;; VRRM(V) = 200 ;; IF(A) = 2.5 ;; VF(V) = 0.98 ;; Trr(ns) = 40 ;; Package = TO-220D-B1|
|MA6D90 VRSM(V) = 200 ;; VRRM(V) = 200 ;; IF(A) = 5 ;; VF(V) = 0.98 ;; Trr(ns) = 45 ;; Package = TO-220D-A1TO-220D-B1|
|MA6D91 VRSM(V) = 200 ;; VRRM(V) = 200 ;; IF(A) = 10 ;; VF(V) = 1 ;; Trr(ns) = 100 ;; Package = TO-220D-A1TO-220D-B1|
|MA6J784 Small-signal Device - Diodes - Schottky Barrier Diodes(SBD)|
|MA6S121 Marking = M2D ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini6-F1|
|MA6S718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini6-F1|
|MA6X078 VR(V) = 35 ;; IF(mA) = 100 ;; Package = Mini6-G1|
|MA6X121 Marking = M2D ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = Mini6-G1|
|MA6X122 Marking = M2A ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 10 ;; Package = Mini6-G2|
BDY27 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 100V ;; IC(cont) = 6A ;; HFE(min) = 15 ;; HFE(max) = 180 ;; @ Vce/ic = 4V / 2A ;; FT = 10MHz ;; PD = 85W.
CM400HU-24H : Type = Igbt Module ;; Voltage = 1200V ;; Current = 400A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves =.
SD107WS : 40V; 1.0A Surface Mount Schottky Barrier Diode. Ideally For Low Logic Level Applications.
KDV273UL : Varactor Diode (VCO for UHF Band Radio). High Capacitance Ratio C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range CHARACTERISTIC Reverse Voltage Reverse Current Capacitance C4V Capacitance Ratio Series Resistance K rS TEST CONDITION VR=1V, f=470MHz.
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AS1A106M04007PA : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 10 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 3 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40.
CFP1/4CT52A100J : RES,AXIAL,CARBON FILM,10 OHMS,300WV,5% +/-TOL,-450,350PPM TC. s: Category / Application: General Use.
DA2JF23 : 0.3 A, 300 V, SILICON, SIGNAL DIODE. s: Package: HALOGEN FREE AND ROHS COMPLIANT, SMINI2-F5-B, 2 PIN ; Number of Diodes: 1 ; IF: 300 mA ; RoHS Compliant: RoHS.
E9AT2502H : 1 ELEMENT, 25 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, FILTER CHOKE ; Inductance Range: 25 microH ; Inductance Tolerance: 10 (+/- %) ; DCR: 0.0200 ohms ; Rated DC Current: 6000 milliamps ; Testing Frequency: 1 kHz.
MPF1 : RESISTOR, 1 W, 0.5; 1; 2; 5; 10 %, 200 ppm, 0.1 ohm - 1000000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF, LEAD/ROHS COMPLIANT ; Operating DC Voltage: 300 volts ; Operating Temperature: -55 to 165 C (-67 to 329 F).
MWI35-12AS : 37 A, 1200 V, N-CHANNEL IGBT. s: Transistor Type / Technology: IGBT ; Polarity: N-Channel.
RN4901TE85N : 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: Complementary.
SI-20001 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.
VIE125-12S4 : 125 A, 1200 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Number of units in IC: 2.