|Category||Discrete => Diodes & Rectifiers => Switching Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA6X121MA121 datasheet
Three-element contained in one package, allowing high-density mounting Short reverse recovery time trr Small terminal capacitance, Ct
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC)*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 Symbol VR VRM IF IFM IFSM Tj Tstg Rating to +150 Unit mA °C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol VR Ct trr = 1 MHz = 10 mA, 6 V Irr = 0.1 IR, RL Conditions Min Typ Max 100 1.2 Unit pF nsNote) 1. Rated input/output frequency: 100 MHz * : trr measuring circuit
Bias Application Unit tr 10% Input Pulse t IF trr t Irr = 100 Output Pulse
Note) The part number in the parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA6X122 Marking = M2A ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 10 ;; Package = Mini6-G2|
|MA6X123 Marking = M2B ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = Mini6-G2|
|MA6X124 Marking = M2C ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = Mini6-G2|
|MA6X125 Marking = M2I ;; VR(V) = 40 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = ;; Package = Mini6-G1|
|MA6X126 Marking = M2S ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = ;; Package = Mini6-G1|
|MA6X127 Marking = M2U ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 10 ;; Package = Mini6-G2|
|MA6X128 Marking = M2V ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = Mini6-G2|
|MA6X129 VR(V) = 200 ;; IF(mA) = 200 ;; Package = Mini6-G1|
|MA6X344 Marking = 5P ;; VR(V) = 30 ;; IF(mA) = 20 ;; Package = Mini6-G1|
|MA6X556 Marking = M2T ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini6-G1|
|MA6X718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini6-G1|
|MA6Z121 Marking = M2D ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini6-F1|
FQ12N30 : 300v N-channel MOSFET.
FR604 : Pakage = R-6 ;; Max. Reverse Voltage VRM (V)= 400 ;; Max. Aver. Rect. Current io (A)= 6 ;; Ifsm (A)= 200.
MA3J142EMA142WK : . Small S-mini type package contained two elements, allowing highdensity mounting Short reverse recovery time trr Small terminal capacitance, Ct Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Single Non-repetitive peak forward surge current* Double Junction temperature Storage.
MBR2035CT : 5 to 100 Amp. 35V 20A Schottky Common Cathode Diode in a TO-220AB Package.
MJ15003 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 140V ;; IC(cont) = 20A ;; HFE(min) = 25 ;; HFE(max) = 150 ;; @ Vce/ic = 2V / 5A ;; FT = 2MHz ;; PD = 250W.
SS29 : Power. 2.0 Ampere Schottky Barrier Rectifiers. Glass passivated junctions. High current capability, low VF. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. 22 Maximum Repetitive Reverse Voltage Average Rectified Forward Current.375 " lead length = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature.
FGH30N60LSD : PDD IGBT The FGH30N60LSD is a MOS gated high voltage switching device combining the best of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor..
APM4018NUC-TRG : 60 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0080 ohms ; Package Type: GREEN PACKAGE-3 ; Number of units in IC: 1.
CWR11HH475MDC/HP : CAPACITOR, TANTALUM, SOLID, POLARIZED, 15 V, 4.7 uF, SURFACE MOUNT, 1411. s: Configuration / Form Factor: Chip Capacitor ; General : Polarized ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 15 volts ; Leakage Current: 0.7000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 1411 ; Operating Temperature:.
MBR10150-BP : 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC. s: Configuration: Single ; Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 150 volts ; RoHS Compliant: RoHS.
PPA-11.51040010000H : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 1.5 uF, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 1.5 microF ; Capacitance Tolerance: 10 (+/- %) ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40.
STK9N10 : 9 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.3000 ohms ; Number of units in IC: 1.
2222LAM1020LYN0110 : CAP,AL2O3,2.2MF,6.3VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.
420KXF100MEFCSN30X20 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 420 V, 100 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 420 volts ; Leakage Current: 615 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F).