|Category||Discrete => Diodes & Rectifiers => Vacators Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA6X344MA344 datasheet
Three isolated elements contained in one package Large capacitance variation ratio Small series resistance rD Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Junction temperature Storage temperature Symbol VR VRM IF Tj Tstg Rating to +150 Unit mA °C
Parameter Reverse current (DC) Diode capacitance Symbol CD(10V) CD(17V) Capacitance ratio Capacitance difference Diode capacitance deviation Series = 9 pF, = 470 MHz = 1 MHz = 1 MHz = 1 MHz = 1 MHz Note)*1 0.75 Conditions Min Typ Max Unit pF %
Note) 1. Rated input/output frequency: 470 MHz 2. Each characteristic is a standard for each diode. *1 : Diode capacitance deviation is controlled to 2% for the rank B and 3% or less for the rank : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZERNote) The part number in the parenthesis shows conventional part number.
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA6X556 Marking = M2T ;; VR(V) = 40 ;; IF(mA) = 100 ;; Package = Mini6-G1|
|MA6X718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini6-G1|
|MA6Z121 Marking = M2D ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini6-F1|
|MA6Z718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini6-F1|
|MA700 VRM(V) = 15 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 0.1 ;; Package = DO-34-A1|
|MA704WA VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini3-G1|
|MA7051 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA7130 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA714 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA715 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.3 ;; IR(µA) = 1 ;; Package = Mini3-G1|
|MA7150 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA716 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini3-G1|
|MA7160 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA717 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.3 ;; IR(µA) = 30 ;; Package = Mini3-G1|
|MA718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini6-G1|
1N4933 : 1.0A Fast Recovery Rectifier.
2N3791 : 60V PNP Silicon Power Transistor.
IRFG5110 : 100V Dual 2N- And 2P- Channel MOSFET in a MO-036AB Package. Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
RU1P : . (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .
SFS9630 : 200V P-channel A-FET / Substitute of IRFS9630. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain.
X25080P-2.7 : Spi Serial E2PROM With Block Locktm Protection. 2MHz Clock Rate SPI Modes X 8 Bits 32 Byte Page Mode Low Power CMOS <1µA Standby Current <5mA Active Current To 5.5V Power Supply Block Lock Protection Protect 1/2 or all of E2PROM Array Built-in Inadvertent Write Protection Power-Up/Power-Down protection circuitry Write Enable Latch Write Protect Pin Self-Timed Write Cycle 5ms Write Cycle Time.
XP04683 : Composite Transistors. Marking = er ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.015 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package = SMini6-G1.
02DZ7.5-X : 7.22 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.
0805F1000391MFT : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.00039 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.90E-4 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style:.
BUK-110-50DL118 : 45 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 0.0350 ohms ; Number of units in IC: 1.
DRA3114T : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN.
LHDM002141AQDD00 : IND,DUST CORE,140UH,20% +TOL,20% -TOL. s: Application: General Purpose.
MCR11A1GYA0-H34V : DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Standards: RoHS.
NP00402HTTP100J : CAP,CERAMIC,10PF,50VDC,5% -TOL,5% +TOL,NP0 TC CODE,-30,30PPM TC,0402 CASE. s: Dielectric: Ceramic Composition.
SQZW108R2J : RESISTOR, WIRE WOUND, 10 W, 5 %, 300 ppm, 8.2 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 8.2 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 Â±ppm/Â°C ; Power Rating: 10 watts (0.0134.
T2-613-1-W38 : 0.07 MHz - 200 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -20 to 85 C (-4 to 185 F).
TIM4450-16SL : C BAND, GaAs, N-CHANNEL, RF POWER, JFET. s: Polarity: N-Channel ; V(BR)DSS: 15 volts ; Package Type: HERMETIC SEALED, 2-16G1B, 3 PIN ; Number of units in IC: 1.