|Category||Discrete => Diodes & Rectifiers => Schottky Diodes|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download MA6X718MA718 datasheet
Three isolated elements are contained in one package, allowing high-density mounting Two (MA704A) is contained in one package (of a type in the same direction) Low forward voltage VF , optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) Mini type 6-pin packageParameter Reverse voltage (DC) Peak forward current
Forward current (DC) * Junction temperature Storage temperature Note) Value per a diode
Parameter Reverse current (DC) Forward voltage (DC) Symbol VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. trr measuring instrumentBias Application Unit tr 10% Input Pulse t IF trr t Irr = 100 Output Pulse
Note) The part number in the parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|MA6Z121 Marking = M2D ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini6-F1|
|MA6Z718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = SMini6-F1|
|MA700 VRM(V) = 15 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 0.1 ;; Package = DO-34-A1|
|MA704WA VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini3-G1|
|MA7051 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA713 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA7130 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA714 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini4-G1|
|MA715 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.3 ;; IR(µA) = 1 ;; Package = Mini3-G1|
|MA7150 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA716 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini3-G1|
|MA7160 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA717 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.3 ;; IR(µA) = 30 ;; Package = Mini3-G1|
|MA718 VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini6-G1|
|MA7180 VZ(V) = 4.80 to 5.40 ;; Package = DO-41-A1|
|MA719 VRM(V) = 40 ;; IF(mA) = 500 ;; VFmax.(V) = 0.55 ;; IR(µA) = 100 ;; Package = DO-34-A1|
FQPF9N08L : 80V N-channel Logic Level QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well.
HER156G : Glass Passivated. Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 600 ;; Max. Aver. Rect. Current io (A)= 1.5 ;; Ifsm (A)= 50.
MJ16020 : Switchmode Series NPN Silicon Power Transistors. These transistors are designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. They are particularly suited for lineoperated switchmode applications. The is a selected highgain version of the MJ16020 for applications where drive current is limited. 30 ns (Typ) Inductive Fall Time 50 ns (Typ) Inductive.
S3AthruS3M : Surface Mount Rectifier. Surface Mount Rectifier. Case: JEDEC DO-214AB molded plastic body over glass passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering: 260°C/10 seconds at terminals Polarity: Color band denotes cathode end Weight: 0.007 oz., 0.25 g Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mount.
SC016 : General Use Rectifier Diode. Applications General purpose rectifier applications Relay control use Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Resistive load Ta=40°C Sine wave 10ms Conditions -2 200 Rating -40 to Unit °C *Mounted.
TIP2955 : Complementary Silicon Power Transistors. The is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP2955. Symbol Parameter PNP NPN V CBO V CEO IB P tot T stg Tj Collector-Base Voltage = 0) Collector-Emitter Voltage.
CH90100000UH+/-10%B : 1 ELEMENT, 100000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Radial, WIRE ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 100000 microH ; Inductance Tolerance: 10 (+/- %) ; DCR: 295 ohms ; Rated DC Current: 12 milliamps ; Q Factor: 30 ; SRF: 0.1000 MHz ; Testing.
DCTC3 : CAPACITOR, TANTALUM, SOLID. Molded cases SMD - Surface mount Sn-Pb or Sn plated - Polarized types Operating temp. Humidity Capacitance range Tolerance Voltage range High surge current +125°C 56 days V50 V N/A +10% +12% Maximum DF see table 1.5 x lim 1.5 x lim 2.0 x lim 20°C see table see table see table MAXIMUM ESR +20°C (100kHz) see table x UC see table MAXIMUM IMPEDANCE see table.
DDZX39-7 : 39 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.
IX-30-0002 : PULSE TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer ; Operating Temperature: -25 to 100 C (-13 to 212 F).
RC25P100J : RES,AXIAL,CARBON COMPOSITION,10 OHMS,250WV,5% +/-TOL. s: Category / Application: General Use ; Standards and Certifications: RoHS.
RN73N2X1780D-T1 : RESISTOR, METAL FILM, 0.1 W, 0.5 %, 10 ppm, 178 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP, LEAD FREE ; Resistance Range: 178 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 10 Â±ppm/Â°C ; Power Rating: 0.1000.
SDD113 : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 500000 Hz ; Output Voltage: 2.2 volts.
SKMD150F10 : 140 A, 1000 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, FAST SOFT RECOVERY ; IF: 140000 mA ; RoHS Compliant: RoHS ; Package: CERAMIC, CASE A51, SEMIPACK-3 ; Pin Count: 3 ; Number of Diodes: 2.
SMS05-LF : 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE. s: Arrangement: Common Anode ; Diode Type: Transient Voltage Suppressor Diodes ; VBR: 6 volts ; RoHS Compliant: RoHS ; Package: ROHS AND REACH COMPLIANT, PLASTIC PACKAGE-6 ; Pin Count: 6 ; Number of Diodes: 4.
SR208-BP : 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-41. s: Rectifier Configuration / Technology: Schottky ; Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 80 volts ; IF: 2000 mA ; RoHS Compliant: RoHS.
X387D15+10-10-370 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 25 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 25 microF ; Capacitance Tolerance: 10 (+/- %) ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 70 C (-40 to 158 F).