Details, datasheet, quote on part number: MSG43004
DescriptionSiGe HBT type For Low-noise RF Amplifier
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload MSG43004 datasheet
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Features, Applications


Compatible between high breakdown voltage and high cut-off frequency Low noise, high-gain amplification Optimal size reduction and high level integration for ultra-small packages

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg Rating to +125 Unit mW C

Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency

Forward transfer gain * Noise figure Collector output capacitance (Common base, input open circuited) *

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. Verified by random sampling

Collector output capacitance C (pF) (Common base, input open circuited) ob

Forward transfer gain , 2 Reverse transfer gain S12e (dB)


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