|
Details, datasheet, quote on part number:NP043A2
| |
Datasheet text preview:
Composite Transistors
NP043A2
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For digital circuits Features
· SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · Maximum package height (0.4 mm) contributes to develop thinner equipments
0.12+0.03 -0.02 6 5 4
Unit: mm
0.80±0.05
1.00±0.04
0 to 0.02
1
2 1.00±0.05
3
(0.35) (0.35)
Basic Part Number
· UNR31A2 + UNR32A2
Display at No.1 lead
0.10
0.10
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC V CBO V CEO IC PT Tj Tstg Rating 50 50 80 -5 0 -5 0 -8 0 125 125 -55 to +125 Unit V V mA V V mA mW °C °C Tr1
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0.03 0.37+0.02 -
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 7T Internal Connection 6
R1 22 k
5
R2 22 k
4
R2 22 k
R1 22 k
Tr2
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R1 / R 2 fT VCB = 10 V, IE = -1 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
1
2
3
Min 50 50
Typ
Max
Unit V V µA µA mA
0.1 0.5 0.2 60 0.25 4.9 0.2 - 30% 0.8 22 1.0 150 + 30% 1.2
V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004 SJJ00285AED
(0.10)
1
NP043A2
Electrical Characteristics (continued) Ta = 25°C ± 3°C
· Tr2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R1 / R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 0.8 22 1.0 80 -4.9 - 0.2 + 30% 1.2 60 - 0.25 Min -5 0 -5 0 - 0.1 - 0.5 - 0.2 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
140
Total power dissipation PT (mW)
120 100 80 60 40 20 0
0
20
40
60
80
100 120 140
Ambient temperature Ta (°C)
Characteristics charts of Tr1 I C VC E
70 0.8 mA 0.7 mA 0.6 mA 0.5 mA IB = 1.0 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC/IB = 10
hFE IC
300 VCE = 10 V Ta = 85°C 25°C
70
0.9 mA
60 50 40 30 20 10 Ta = 25°C 0 0 2 4 6 8 10 12 0.1 mA 0.4 mA 0.3 mA 0.2 mA
1
Forward current transfer ratio hFE
250
Collector current IC (mA)
200
150
0.1
Ta = 85°C -25°C 25°C
100
-25°C
50
0.01
1
10
100
0 0.1
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00285AED
NP043A2
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
IO VIN
100 VO = 5 V Ta = 25°C
10 VO = 0.2 V Ta = 25°C
V IN I O
Output current IO (mA)
10
1
Input voltage VIN (V)
1
1
0.1
0
5
10
15
20
25
30
35
40
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
0.1 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of Tr2 I C VC E
Collector-emitter saturation voltage VCE(sat) (V)
-70 Ta = 25°C -60 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 IB = -1.0 mA
VCE(sat) IC
-10 IC/IB = 10
250 VCE = -10 V
hFE IC
Ta = 85°C
Forward current transfer ratio hFE
200 25°C 150 -25°C
Collector current IC (mA)
-50 -40 -30 -20 -10
-1
Ta = 85°C - 0.1 25°C -25°C
100
50
- 0.01 -1
-10
0 -1
-10
-100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
IO VIN
-100 Ta = 25°C
V IN I O
-100 VO = - 0.2 V Ta = 25°C
Output current IO (mA)
-10
Input voltage VIN (V)
-2 -4 -6 -8 -10
1
-10
-1
0.1
0
5
10
15
20
25
30
35
40
- 0.1
0
-1 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJJ00285AED
3
|
|
