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Details, datasheet, quote on part number:NP061A5
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| Part: | NP061A5 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 6X ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.08 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download NP061A5 datasheet File size : 85 kB |
| Request For quote: | Find where to buy NP061A5
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Datasheet text preview:
Composite Transistors
NP061A5
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
6
0.12+0.03 -0.02 5 4
0.80±0.05 1.00±0.05
Features
· SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · Maximum package height (0.4 mm) contributes to develop thinner equipments
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35)
Display at No.1 lead
· UNR31A5 × 2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
*
Symbol V CBO V CEO IC PT Tj Tstg
Rating -5 0 -5 0 -8 0 125 125 -55 to +125
Unit V V mA mW °C °C
1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2)
0.03 0.37+0.02 -
4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 6X Internal Connection
6 5 4
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
Tr1 Tr2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE hF E ( S m a l l
/Large)
1
2
3
Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k
Min -5 0 -5 0
Typ
Max
Unit V V
- 0.1 - 0.5 - 0.01 160 0.5 0.99 - 0.25 -4.9 - 0.2 - 30% 10 80 + 30% 460
µA µA mA V V V k MHz
V CE(sat) VO H VOL R1 fT
VCB = -10 V, IE = 1 mA, f = 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another
(0.10)
Basic Part Number
0.10
0.10
Publication date: June 2003
SJJ00259BED
1
NP061A5
PT Ta
140 120 100 80 60 40 20 0
IC VCE
-90 Ta = 25°C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
-100
Total power dissipation PT (mW)
Collector current IC (mA)
-80 -70 -60 -50 -40 -30 -20 -10
-10
-1
Ta = 85°C - 0.1 25°C -10 -100 -25°C
- 0.1 mA
0
20
40
60
80
100 120 140
0
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
450 VCE = -10 V 400
10
Cob VCB
f = 1 MHz Ta = 25°C
I O VI N
-100 VO = -5 V Ta = 25°C
Forward current transfer ratio hFE
Ta = 85°C
Output current IO (mA)
1 -10 -20 -30 -40
350 300 250 200 150 100 50 0 -1 -10 -100 25°C -25°C
-10
-1
0
- 0.1
0
-1
-2
-3
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-100 VO = - 0.2 V Ta = 25°C
Input voltage VIN (V)
-10
-1
- 0.1 - 0.1
-1
-10
-100
Output current IO (mA)
2
SJJ00259BED
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