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Details, datasheet, quote on part number:NP061AN
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| Part: | NP061AN |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 2L ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.08 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(Tr2)(kW ) = 47 ;; Package = SSSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download NP061AN datasheet File size : 83 kB |
| Request For quote: | Find where to buy NP061AN
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Datasheet text preview:
Composite Transistors
NP061AN
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
6
0.12+0.03 -0.02 5 4
0.80±0.05 1.00±0.05
Features
· Two elements incorporated into one package · Suitable for high-density mounting and downsizing of the equipment · Contribute to low power consumption
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35)
Basic Part Number
· UNR31AN × 2
Display at No.1 lead
0.10
0.10
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating -5 0 -5 0 -8 0 125 125 -55 to +125 Unit V V mA mW °C °C
1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2)
0.03 0.37+0.02 -
4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 2L Internal Connection
6 Tr1 5 4
Tr2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE h FE(Small/
Large)
1
2
3
Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k
Min -5 0 -5 0
Typ
Max
Unit V V
- 0.1 - 0.5 - 0.2 80 0.50 0.99 - 0.25 -4.9 - 0.2 - 30% 4.7 0.1 + 30% 400
µA µA mA V V V k MHz
V CE(sat) VO H VOL R1 R1 / R 2 fT
VCB = -10 V, IE = 1 mA, f = 200 MHz
80
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another
(0.10)
Publication date: June 2003
SJJ00277BED
1
NP061AN
PT Ta
140 120
-80
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
- 0.9 mA Ta = 25°C - 0.8 mA IB = -1.0 mA - 0.7 mA - 0.6 mA - 0.5 mA -60 - 0.4 mA - 0.3 mA -40 - 0.2 mA
VCE(sat) IC
-100
Total power dissipation PT (mW)
Collector current IC (mA)
100 80 60 40 20 0
-10
25°C
-1
Ta = 85°C
-20
- 0.1 mA
- 0.1
-25°C
0
40
80
120
0
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
IC / IB = 10 -10 -100 -1 000
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
250 Ta = 85°C VCE = -10 V
Cob VCB
10 f = 1 MHz Ta = 25°C
-100 VO = -5 V Ta = 25°C
I O VI N
Forward current transfer ratio hFE
200
25°C -25°C
150
Output current IO (mA)
1 -10 -20 -30 -40
-10
100
50
0 -1
-10
-100
-1 000
0
-1
0
- 0.5
-1.0
-1.5
-2.0
-2.5
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-10 VO = - 0.2 V Ta = 25°C
Input voltage VIN (V)
-1
- 0.1 - 0.1
-1
-10
-100
Output current IO (mA)
2
SJJ00277BED
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