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Details, datasheet, quote on part number:NP062AN
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| Part: | NP062AN |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 2N ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.08 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(Tr2)(kW ) = 47 ;; Package = SSSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download NP062AN datasheet File size : 83 kB |
| Request For quote: | Find where to buy NP062AN
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Datasheet text preview:
Composite Transistors
NP062AN
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
6
0.12+0.03 -0.02 5 4
0.80±0.05 1.00±0.05
Features
· Two elements incorporated into one package · Suitable for high-density mounting and downsizing of the equipment · Contribute to low power consumption
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35)
Basic Part Number
· UNR32AN × 2
Display at No.1 lead
0.10
0.10
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating 50 50 80 125 125 -55 to +125 Unit V V mA mW °C °C
1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2)
0.03 0.37+0.02 -
4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 2N Internal Connection
6 Tr1 5 4
Tr2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE h FE(Small/
Large)
1
2
3
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
Min 50 50
Typ
Max
Unit V V µA µA mA
0.1 0.5 0.2 80 0.50 0.99 0.25 4.9 0.2 - 30% 4.7 0.1 + 30% 400
V CE(sat) VO H VOL R1 R1 / R 2 fT
V V V k MHz
VCB = 10 V, IE = -2 mA, f = 200 MHz
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another
(0.10)
Publication date: June 2003
SJJ00272BED
1
NP062AN
PT Ta
140 120
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
80 0.9 mA IB = 1.0 mA 0.8 mA 70 0.7 mA Ta = 25°C 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 30 0.1 mA 20 10 0
1
VCE(sat) IC
IC / IB = 10
Total power dissipation PT (mW)
Collector current IC (mA)
100 80 60 40 20 0
60 50
0.1
Ta = 85°C -25°C 25°C
0
20
40
60
80
100 120 140
0
2
4
6
8
10
12
0.01
1
10
100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
VCE = 10 V Ta = 85°C 25°C 200
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
100 VO = 5 V Ta = 25°C
I O VI N
300
Forward current transfer ratio hFE
250
Output current IO (mA)
1 0 10 20 30 40
10
150
-25°C
100
1
50
0
1
10
100
0.1
0
0.5
1.0
1.5
2.0
2.5
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
10 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
1
0.1 0.1
1
10
100
Output current IO (mA)
2
SJJ00272BED
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