|
Details, datasheet, quote on part number:NP0A456
| |
| Part: | NP0A456 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 3E ;; V<SUB>CEO</SUB>(V) = -15 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.05 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download NP0A456 datasheet File size : 87 kB |
| Request For quote: | Find where to buy NP0A456
|
| |
Datasheet text preview:
Composite Transistors
NP0A456
Silicon PNP epitaxial planar type
Unit: mm
For High speed switching
6
0.12+0.03 -0.02 5 4
0.80±0.05 1.00±0.05
Features
· Suitable for high-density mounting and downsizing of the equipment · Automatic insertion with the taping is possible
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35)
Basic Part Number
· 2SA2082 × 2
Display at No.1 lead
0.10
0.10
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
*
Symbol V CBO V CEO V EBO IC ICP PT Tj Tstg
Rating -1 5 -1 5 -4 -5 0 -100 125 125 -55 to +125
Unit V V V mA mA mW °C °C
1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2) 4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 3E Internal Connection
6
Tr1
0.03 0.37+0.02 -
5
4
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm 1 2
Tr2
3
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol ICBO IEBO h FE1 h FE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Turn-off time Storage time V CE(sat) fT Co b to n to f f tstg Conditions VCB = -8 V, IE = 0 VEB = -3 V, IC = 0 VCE = -1 V, IC = -10 mA VCE = -1 V, IC = -1 mA IC = -10 mA, IB = -1 mA VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -5 V, IE = 0, f = 1 MHz Refer to the switching time measurement circuit 800 50 30 - 0.1 1 500 1 12 20 19 - 0.2 V MHz pF ns ns ns Min Typ Max - 0.1 - 0.1 150 Unit µA µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(0.10)
Publication date: June 2003
SJJ00269BED
1
NP0A456
Switching time measurement circuit ton , toff test circuit
VBB 2 k VIN 0.1 µF 51 52 VCC = -1.5 V 62 VOUT VIN 0.1 µF 51
tstg test circuit
VBB = -10 V VCC = -3 V 508 34 30 VOUT
VIN VOUT
0
10% 90% 90% ton toff VIN = 9.8 V VBB = -8.0 V 10%
VIN 0 VOUT
90% 90% tstg VIN = 9.0 V
VIN = -5.8 V VBB = Ground
PT Ta
140 120
-80 -70
IC VCE
IB = -600 µA -500 µA
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
Ta = 25°C
-10
IC / IB = 10
Total power dissipation PT (mW)
Collector current IC (mA)
100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
-60 -50 -40 -30 -20 -10 0 -2 -4 -6 -8
-400 µA -300 µA -200 µA
-1
Ta = -25°C 75°C 25°C
-100 µA
0
-10
-12
- 0.1 - 0.1
-1
-10
-100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10 IC / IB = 10
hFE IC
Ta = 75°C 140
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
VCE = -1 V
160
10
f = 1 MHz Ta = 25°C
Forward current transfer ratio hFE
120 100
25°C
-1 Ta = 75°C 25°C - 0.1 -25°C
-25°C 80 60 40 20 0 - 0.1
1
- 0.01 -1
-10
-100
-1 000
-1
-10
-100
0.1
0
-4
-8
-12
-16
Collector current IC (mA)
Collector current IC (mA)
Collector-base voltage VCB (V)
2
SJJ00269BED
|
|
