|
Details, datasheet, quote on part number:NP0A547
| |
| Part: | NP0A547 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 1R ;; V<SUB>CEO</SUB>(V) = 7 ;; V<SUB>CEO</SUB>(Tr2)(V) = 7 ;; I<SUB>C</SUB>(A) = 0.01 ;; I<SUB>C</SUB>(Tr2)(A) = 0.01 ;; P<SUB>T</SUB>(W) = 0.05 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download NP0A547 datasheet File size : 93 kB |
| Request For quote: | Find where to buy NP0A547
|
| |
Datasheet text preview:
Composite Transistors
NP0A547
Silicon NPN epitaxial planar transistor
Unit: mm
For high-speed switching
6
0.12+0.03 -0.02 5 4
0.80±0.05
· SSS-Mini type package, reduction of the mounting area and assembly cost by one half · Maximum package height (0.4 mm) contributes to develop thinner equipments
1.00±0.05
Features
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35)
Display at No.1 lead
0.10
0.10
Basic Part Number of Element
· 2SC3707 × 2 elements
1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)
0.03 0.37+0.02 -
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO V CEO V EBO IC VCBO V CEO V EBO IC PT Tj Tstg Rating 10 7 2 10 10 7 2 10 50 125 -55 to +125 Unit V V V mA V V V mA mW °C °C
4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 1R Internal Connection
6
Tr1
5
4
Tr2
1
2
3
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
(0.10)
Publication date: June 2002
SJJ00256AED
1
NP0A547
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Gain bandwidth product Collector output capacitance Forward transfer gain Power gain Noise figure Symbol ICBO IEBO h FE fT Co b S21e 2 GUM NF Rating VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 100 4 0.4 6.0 15 3.5 Unit 1 1 200 GHz pF dB dB dB µA µA
· Tr2
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Gain bandwidth product Collector output capacitance Forward transfer gain Power gain Noise figure Symbol ICBO IEBO h FE fT Co b S21e2 GUM NF Rating VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 80 4 0.4 6.0 15 3.5 Unit 1 1 200 GHz pF dB dB dB µA µA
2
SJJ00256AED
NP0A547
PC Ta
100
6 IB = 50 µA 5
IC VCE
Ta = 25°C 45 µA 35 µA 30 µA 25 µA 20 µA 2 15 µA 10 µA 1 5 µA 60
IC VBE
VCE = 1 V
Collector power dissipation PC (mW)
50
Collector current IC (mA)
75
4
Collector current IC (mA)
40 µA
40 25°C 30 Ta = 75°C -25°C
50
3
20
25
10
0
0
0
40
80
120
160
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 Ta = 75°C 0.3 0.1 0.03 0.01 0.1 0 0.1 25°C -25°C IC / IB = 10 240
hFE IC
VCE = 1 V 12
fT I C
VCE = 1 V f = 800 MHz Ta = 25°C
Forward current transfer ratio hFE
160 Ta = 75°C 120 25°C 80 -25°C 40
Transition frequency fT (GHz)
10 30 100
200
10
8
6
4
2
0.3
1
3
10
30
100
0.3
1
3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
1.2
GUM IC
Maximum unilateral power gain GUM (dB)
IE = 0 f = 1 MHz Ta = 25°C 24 VCE = 1 V f = 800 MHz Ta = 25°C 6
NF IC
VCE = 1 V (Rg = 50 ) f = 800 MHz Ta = 25°C
Collector output capacitance Cob (pF)
1.0
20
5
0.8
16
Noise figure NF (dB)
0.3 1 3 10 30 100
4
0.6
12
3
0.4
8
2
0.2
4
1
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
SJJ00256AED
3
|
|
