|
Details, datasheet, quote on part number:NP0G3A0
| |
Datasheet text preview:
Composite Transistors
NP0G3A0
Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2)
Unit: mm
For digital circuits
0.12+0.03 -0.02 6 5 4
0.80±0.05
· SSS-Mini type 6-pin package reduction of the mounting area and assembly cost by one half · Maximum package height (0.4 mm) contributes to develop thinner equipments
1.00±0.04
Features
0 to 0.02
1
2 1.00±0.05
3
(0.35) (0.35)
Display at No.1 lead
Basic Part Number
0.03 0.37+0.02 -
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation * Junction temperature Storage temperature Symbol V CBO V CEO IC V CBO V CEO IC PT Tj Tstg Rating -5 0 -5 0 -8 0 50 50 80 125 125 -55 to +125 Unit V V mA V V
1 : Base (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr1) 6 : Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 6L Internal Connection
6 5 4 (C1) (E1) (C2) Tr1
47 k
mW °C °C
(B1) (B2) (E2) 1 2 3
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
47 k
mA
Tr2
(0.10)
· UNR21A0 + UNR22A0
0.10
0.10
Publication date: June 2004
SJJ00291AED
1
NP0G3A0
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 47 80 -4.9 - 0.2 + 30% 160 Min -5 0 -5 0 - 0.1 - 0.5 - 0.01 460 - 0.25 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
· Tr2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k - 30% 47 150 4.9 0.2 + 30% 160 Min 50 50 0.1 0.5 0.01 460 0.25 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
140 120 100 80 60 40 20 0
Total power dissipation PT (mW)
0
40
80
120
Ambient temperature Ta (°C)
2
SJJ00291AED
NP0G3A0
Characteristics charts of Tr1 I C VC E
Ta = 25°C -70 - 0.8 mA IB = -1.0mA - 0.9 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10 IC / IB = 10
hFE IC
350 300 250 200 150 100 50 0 -1 VCE = -10 V Ta = 85°C 25°C -25°C
-80
Collector current IC (mA)
-60 -50 -40 -30 -20 -10 0 -2 -4 -6 -8
-1
Ta = 85°C - 0.1 25°C -25°C
- 0.1 mA
0
-10
-12
- 0.01 -1
Forward current transfer ratio hFE
-10
-100
-10
-100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
IO VIN
-10 VO = -5 V Ta = 25°C
VIN IO
-100 VO = - 0.2 V Ta = 25°C
Output current IO (mA)
Input voltage VIN (V)
-1
-10
- 0.1
-1
- 0.01
0
- 0.5
-1
-1.5
-2
-2.5
- 0.1 - 0.1
-1
-10
-100
Input voltage VIN (V)
Output current IO (mA)
SJJ00291AED
3
|
|
