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Details, datasheet, quote on part number:NP0G3D3
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| Part: | NP0G3D3 |
| Category: | Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) |
| Description: | Marking = 3H ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = 22 ;; Package = SSSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download NP0G3D3 datasheet File size : 71 kB |
| Request For quote: | Find where to buy NP0G3D3
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Datasheet text preview:
Transistors with built-in Resistor
NP0G3D3
Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2)
Unit: mm
For digital circuits
0.12+0.03 -0.02 6 5 4
0.80±0.05
(0.35) (0.35) 1.00±0.05
Basic Part Number of Element
· UNR31A3 × UNR32AT
Display at No.1 lead
0.10
· Two elements incorporated into one package · Suitable for high density package and downsizing of the equipment · Automatic insertion with the taping is possible
1.00±0.05
Features
0 to 0.02
1
2
3
0.10
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation * Junction temperature Storage temperature Symbol VCBO V CEO IC VCBO V CEO IC PT Tj Tstg Rating -5 0 -5 0 -8 0 50 50 80 125 125 -55 to +125 Unit V V mA V V mA mW °C °C
1: Base (Tr1) 2: Base (Tr2) 3: Emitter (Tr2)
0.03 0.37+0.02 -
4: Collector (Tr2) 5: Emitter (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 3H Internal Connection
6 Tr1 Tr2 5 4
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
1 2 3
(0.10)
Publication date: June 2002
SJH00052AED
1
NP0G3D3
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol V CBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High level output voltage Low level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO h FE VCE(sat) VOH V OL R1 R1 / R2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k - 30% 0.8 47 1.0 80 -4.9 - 0.2 + 30% 1.2 80 - 0.25 Min -5 0 -5 0 - 0.1 - 0.5 - 0.1 mA V V V k MHz Typ Max Unit V V µA
· Tr2
Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol V CBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High level output voltage Low level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO h FE VCE(sat) VOH V OL R1 R1 / R2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k - 30% 22 0.47 150 4.9 0.2 + 30% 80 Min 50 50 0.1 0.5 0.2 400 0.25 mA V V V k MHz Typ Max Unit V V µA
Common characteristics chart PT Ta
140 120 100 80 60 40 20 0
Total power dissipation PT (mW)
0
20
40
60
80
100 120 140
Ambient temperature Ta (°C)
2
SJH00052AED
NP0G3D3
Characteristics charts of Tr1 I C VC E
-90 Ta = 25°C -80 IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -10
VCE(sat) IC
250
hFE IC
VCE = -10 V Ta = 75°C 25°C -25°C 150
Collector to emitter saturation voltage VCE(sat) (V)
Forward current transfer ratio hFE
IC / IB = 10 -100
Collector current IC (mA)
-70 -60 -50 -40 -30 -20 -10 0 0 -2 -4 -6 -8
200
-1
Ta = 75°C
100
- 0.1 25°C -25°C
-1 mA
50
-10
-12
- 0.01 - 0.1
-1
-10
0 -1
-10
-100
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
IO VIN
f = 1 MHz Ta = 25°C -100 VO = -5 V Ta = 25°C -100
V IN I O
VO = - 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
Output current IO (mA)
Input voltage VIN (V)
-2 -4 -6 -8 -10 -12
-10
-10
-1
1
0
-8
-16
-24
-32
-40
-1
0
- 0.1 - 0.1
-1
-10
-100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJH00052AED
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