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Part: OH10003OH003
Category:
Sensors
-> Magnetic Sensors
-> Magnetics/Hall-Effect Sensors
Description:
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download OH10003OH003 datasheet File size : 298 kB
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Datasheet text preview:
GaAs Hall Devices
OH10003 (OH003)
GaAs Hall Device
Magnetic sensor I Features
· Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package.
Unit : mm
02 2.9+0..05
1.9±0.1 (0.95) (0.95) 3 4
02 1.5+0..3 02 2.8+0..3
01 0.16+0..06
R(0.5)
2
01 0.4+0..05
1
(0.65) 0.4±0.2
5°
(1.45)
(0.8)
I Applications
· Various hall motor (VCR, phonograph, VD, CD, and FDD) · Automotive equipment · Industrial equipment · Applicable to wide-varying field (OA equipment, etc.)
7°
02 1.1+0..1
0 to 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD To p r Tstg Rating 12 150 -30 to +125 -55 to +125 Unit V mW °C °C
1 : VH Output (-) side 2 : VC Input (-) side 3 : VH Output (+) side 4 : VC Input (+) side Mini 4-G2 Package
Marking Symbol: 3
I Electrical Characteristics Ta = 25°C
Parameter Hall voltage*1, 4 Unequilibrium ratio*2, 4 Symbol VH VHO/VH RI N R OUT Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T/B = 0.1 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.50 0.852 5 -0 . 0 6 0.3 2 Min 130 Typ 150 Max 170 ±12 Unit mV % k k %/°C %/ ° C %
Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) * 1 : *2 : *3 :
*4 :
VH++VH- VH = 2 Unequilibrium ratio is a percentage of VHO with respect to VH. The linearity of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5-KH1 VH = (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC~ B VH, VHO/VH rank classification HQ 130 to 158 -5 to +5 3HQ 3HR 3IQ HR 142 to 170 IQ 130 to 158 +2 to +12 3IR IR 142 to 170 KQ KR Note) The part number parenthesis shows conventional part number.
Class VH (mV) VHO/VH (%) Marking Symbol
130 to 158 142 to 170 -2 to -12 3KQ 3KR
687
OH10003
PD T a
200 180
GaAs Hall Devices
VH Ta
240 B = 1 kG IC = 6 mA 200 1 600 1 400
RIN Ta
B=0 IC = 1 mA
Power dissipation PD (mW)
160 140 120 100 80 60 40
Input resistance RIN ()
-40
Hall voltage VH (mV)
1 200 1 000 800 600 400 200
160
120
80
40
20 0 0 20 40 60 80 100 120 140 160
0
0
40
80
120
0
-40
0
40
80
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VH B
1 600 1 400 VC = 6 V Ta = 25°C
320 280
VH IC
B = 1 kG Ta = 25°C 320 280
VH VC
B = 1 kG Ta = 25°C
Hall voltage VH (mV)
Hall voltage VH (mV)
1 000 800 600 400 200 0
200 160 120 80 40 0
Hall voltage VH (mV)
0 2 4 6 8 10 12 14 16
1 200
240
240 200 160 120 80 40 0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
Magnetic flux density B (T)
Control current IC (mA)
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4 3 2 1 - +
+9 V
-9 V
-9 V
-V
+V
688
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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