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Part: OH10004
Category:
Sensors
Description: GAAS Hall Device
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download OH10004 datasheet File size : 298 kB
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Datasheet text preview:
GaAs Hall Devices
OH10004
GaAs Hall Device
Magnetic sensor I Features
· Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package.
0.65 ± 0.15 4
Unit : mm
2.8 - 0.3
+ 0.2
1.5 ± 0.2 1 0.5 R
0.65 ± 0.15
0.4 - 0.05 (0.5 R) 0.16 - 0.06
+ 0.1
0.95 0.95
2.9 ± 0.2 1.9 ± 0.2
3
2
0.5 ± 0.1 1.1 - 0.05
+ 0.1
0.8
I Applications
· Various hall motor (VCR, phonograph, VD, CD, and FDD) · Automotive equipment · Industrial equipment
0 to 0.1 0.4 ± 0.2 0.4 ± 0.2 1.0 ± 0.025
I Absolute Maximum Ratings Ta = 25°C
Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD To p r Tstg Rating 12 150 -30 to +125 -55 to +125 Unit V mW °C °C
1 : VH Output (-) side 2 : VC Input (-) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) with positioning projection
Marking Symbol: 4
I Electrical Characteristics Ta = 25°C
Parameter Hall voltage*1, 4 Unequilibrium ratio*2, 4 Symbol VH VHO/VH RI N R OUT Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T/B = 0.1 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.50 0.85 5 -0 . 0 6 0.3 2 Min 130 Typ 150 Max 170 ±12 Unit mV % k k %/°C %/ ° C %
Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) * 1 : V H =
VH++VH- 2 *2 : Unequilibrium ratio is a percentage of VHO with respect to VH. *3 : The linearity of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5-KH1 VH = (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC~ B *4 : VH, VHO/VH rank classification Class HQ 130 to 158 -5 to +5 4HQ 4HR 4IQ HR 142 to 170 IQ 130 to 158 +2 to +12 4IR IR 142 to 170 KQ KR
VH (mV) VHO/VH (%) Marking Symbol
130 to 158 142 to 170 -2 to -12 4KQ 4KR
+ 0.1
1.45 ± 0.2
1
OH10004
PD T a
200 180 240 B = 1 kG IC = 6 mA 200
GaAs Hall Devices
VH Ta
1 600 1 400
RIN Ta
B=0 IC = 1 mA
Power dissipation PD (mW)
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Input resistance RIN ()
-40
Hall voltage VH (mV)
1 200 1 000 800 600 400 200
160
120
80
40
0
0
40
80
120
0
-40
0
40
80
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VH B
1 600 1 400 VC = 6 V Ta = 25°C
320 280
VH IC
B = 1 kG Ta = 25°C 320 280
VH VC
B = 1 kG Ta = 25°C
Hall voltage VH (mV)
Hall voltage VH (mV)
1 000 800 600 400 200 0
200 160 120 80 40 0
Hall voltage VH (mV)
0 2 4 6 8 10 12 14 16
1 200
240
240 200 160 120 80 40 0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
Magnetic flux density B (T)
Control current IC (mA)
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4 3 2 1 - +
+9 V
-9 V
-9 V
-V
+V
2
Others parts begin by oh
OH-1
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