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Details, datasheet, quote on part number:OH10004OH004
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Datasheet text preview:
GaAs Hall Devices
OH10004 (OH004)
GaAs Hall Device
Magnetic sensor
1.45±0.05 0.6±0.05 0.26±0.05
Unit : mm
I Features
· Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package.
0.9±0.05
0.6±0.1
3
4
0 to 0.15
1.45±0.05 2.85±0.25
0.8±0.1
5°
0.5±0.1
2
1 0.3 max. 5°
0.2 m
I Applications
· Various hall motor (VCR, phonograph, VD, CD, and FDD) · Automotive equipment · Industrial equipment
I Absolute Maximum Ratings Ta = 25°C
Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD To p r Tstg Rating 12 150 -30 to +125 -55 to +125 Unit V mW °C °C
1 : VH Output (-) side 2 : VC Input (-) side 3 : VH Output (+) side 4 : VC Input (+) side HallT4Mini-CON-G1 Package
Marking Symbol: 4
I Electrical Characteristics Ta = 25°C
Parameter Hall voltage*1, 4 Unequilibrium ratio*2, 4 Symbol VH VHO/VH RI N R OUT Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T/B = 0.1 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.50 0.85 5 -0 . 0 6 0.3 2 Min 130 Typ 150 Max 170 ±12 Unit mV % k k %/°C %/ ° C %
Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) * 1 : V H =
VH++VH- 2 *2 : Unequilibrium ratio is a percentage of VHO with respect to VH. *3 : The linearity of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5-KH1 VH = (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC~ B *4 : VH, VHO/VH rank classification Class HQ 130 to 158 -5 to +5 4HQ 4HR 4IQ HR 142 to 170 IQ 130 to 158 +2 to +12 4IR IR 142 to 170 KQ KR Note) The part number par e n t h e s i s shows conventional part number.
VH (mV) VHO/VH (%) Marking Symbol
130 to 158 142 to 170 -2 to -12 4KQ 4KR
1.0±0.025
ax.
689
OH10004
PD T a
200 180 240 B = 1 kG IC = 6 mA 200
GaAs Hall Devices
VH Ta
1 600 1 400
RIN Ta
B=0 IC = 1 mA
Power dissipation PD (mW)
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Input resistance RIN ()
-40
Hall voltage VH (mV)
1 200 1 000 800 600 400 200
160
120
80
40
0
0
40
80
120
0
-40
0
40
80
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VH B
1 600 1 400 VC = 6 V Ta = 25°C
320 280
VH IC
B = 1 kG Ta = 25°C 320 280
VH VC
B = 1 kG Ta = 25°C
Hall voltage VH (mV)
Hall voltage VH (mV)
1 000 800 600 400 200 0
200 160 120 80 40 0
Hall voltage VH (mV)
0 2 4 6 8 10 12 14 16
1 200
240
240 200 160 120 80 40 0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
Magnetic flux density B (T)
Control current IC (mA)
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4 3 2 1 - +
+9 V
-9 V
-9 V
-V
+V
690
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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