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Details, datasheet, quote on part number:OH10009OH009
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Datasheet text preview:
GaAs Hall Devices
OH10009 (OH009)
GaAs Hall Device
Magnetic sensor
02 2.9+0..05
Unit : mm
I Features
· Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.75 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package.
1.9±0.1 (0.95) (0.95) 3 4
02 1.5+0..3 02 2.8+0..3
01 0.16+0..06
R(0.5)
2
01 0.4+0..05
1
(0.65) 0.4±0.2
5°
(1.45)
(0.8)
7°
02 1.1+0..1
I Applications
· Various hall motor (VCR, phonograph, VD, CD, and FDD) · Automotive equipment · Industrial equipment · Applicable to wide-varying field (OA equipment, etc.)
0 to 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD To p r Tstg Rating 12 150 -30 to +125 -55 to +125 Unit V mW °C °C
1 : VH Output (-) side 2 : VC Input (-) side 3 : VH Output (+) side 4 : VC Input (+) side Mini 4-G2 Package
Marking Symbol: O9
I Electrical Characteristics Ta = 25°C
Parameter Hall voltage*1 Unequilibrium ratio*2, 4 Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) * 1 : V H = *2 : *3 : Symbol VH V HO RI N R OUT Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.5 0.75 1.7 5 -0 . 0 6 0.3 2 Min 80 Typ 105 Max 130 ±19 Unit mV mV k k %/°C %/ ° C %
*4 :
VH++VH- 2 Output pin voltage under no-load (B = 0) condition The linearity of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5-KH1 VH = (the cumulative sensitivity KH = ) IC~ B 1/2(KH1+KH5) VHO rank classification A +19 to +9 B +12 to +2 C +5 to -5 D -2 to -12 E -9 to -19 Note) The part number parenthesis shows conventional part number.
Class VHO (mV)
693
OH10009
PD T a
200 180 240 B = 1 kG IC = 6 mA 200
GaAs Hall Devices
VH Ta
1 600 1 400
RIN Ta
B=0 IC = 1 mA
Power dissipation PD (mW)
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Input resistance RIN ()
Hall voltage VH (mV)
1 200 1 000 800 600 400 200 0
160
120
80
40
0
-40
0
40
80
120
-40
0
40
80
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VH B
1 600 1 400 VC = 6 V Ta = 25°C
320 280
VH IC
B = 1 kG Ta = 25°C 320 280
VH VC
B = 1 kG Ta = 25°C
Hall voltage VH (mV)
Hall voltage VH (mV)
1 000 800 600 400 200 0
200 160 120 80 40 0
Hall voltage VH (mV)
0 2 4 6 8 10 12 14 16
1 200
240
240 200 160 120 80 40 0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
14
16
Magnetic flux density B (T)
Control current IC (mA)
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4 3 2 1 - +
+9 V
-9 V
-9 V
-V
+V
694
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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