|
Details, datasheet, quote on part number:OH10010
| |
Datasheet text preview:
GaAs Hall Devices
OH10010
GaAs Hall Device
Magnetic sensor I Features
· Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.75 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package.
0.65 ± 0.15 4
Unit : mm
2.8 - 0.3
+ 0.2
1.5 ± 0.2 1 0.5 R
0.65 ± 0.15
0.4 -0.05 (0.5 R) 0.16 - 0.06
+0.1
0.95 0.95
2.9 ± 0.2 1.9 ± 0.2
3
2
0.5 ± 0.1 1.1 - 0.1
+ 0.2
0.8
0 to 0.1 0.4 ± 0.2 0.4 ± 0.2 1.0 ± 0.025
I Applications
· Various hall motor (VCR, phonograph, VD, CD, and FDD) · Automotive equipment · Industrial equipment · Applicable to wide-varying field (OA equipment, etc.)
1 : VH Output (-) side 2 : VC Input (-) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) with positioning projection
I Absolute Maximum Ratings Ta = 25°C
Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD To p r Tstg Rating 12 150 -30 to +125 -55 to +125 Unit V mW °C °C
Marking Symbol: ON
I Electrical Characteristics Ta = 25°C
Parameter Hall voltage*1 Unequilibrium ratio*2, 4 Symbol VH V HO RI N R OUT Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.5 0.75 1.5 5 -0 . 0 6 0.3 2 Min 80 Typ 105 Max 130 ±19 Unit mV mV k k %/°C %/ ° C %
Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) * 1 : V H =
VH++VH- 2 *2 : Output pin voltage under no-load (B = 0) condition *3 : The linearity of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5-KH1 VH = (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC~ B *4 : VHO rank classification Class A +19 to +9 B +12 to +2 C +5 to -5 D -2 to -12 E -9 to -19
VHO (mV)
+ 0.1
1.45±0.2
1
OH10010
PD T a
200 180 240 B = 1 kG IC = 6 mA 200
GaAs Hall Devices
VH Ta
1 600 1 400
RIN Ta
B=0 IC = 1 mA
Power dissipation PD (mW)
160 140 120 100 80 60 40 20 0
Input resistance RIN ()
-40
Hall voltage VH (mV)
1 200 1 000 800 600 400 200
160
120
80
40
0 0 20 40 60 80 100 120 140 160
0
40
80
120
0
-40
0
40
80
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VH B
1 600 1 400 VC = 6 V Ta = 25°C
320 280
VH IC
B = 1 kG Ta = 25°C 320 280
VH VC
B = 1 kG Ta = 25°C
Hall voltage VH (mV)
Hall voltage VH (mV)
1 000 800 600 400 200 0
200 160 120 80 40 0
Hall voltage VH (mV)
0 2 4 6 8 10 12 14 16
1 200
240
240 200 160 120 80 40 0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
14
16
Magnetic flux density B (T)
Control current IC (mA)
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4 3 2 1 - +
+9 V
-9 V
-9 V
-V
+V
2
|
|
