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Details, datasheet, quote on part number:ON1002
 
 
Part:ON1002
Category:Optoelectronics => Photosensors => Transmissive Photosensors
Description:Features = Small Type ;; I<SMALL><SUB>F</SUB></SMALL>(mA)(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V) = 35 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA)(mA) = 0.065 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(nA)(nA) = 100 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 35 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.4 ;; Package = PISMR104-001
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download ON1002 datasheet   File size : 72 kB
Request For quote:  Find where to buy ON1002
 



Datasheet text preview:
Transmissive Photosensors (Photo Interrupters)

CNZ1002 (ON1002)
Photo Interrupter
A

For contactless SW, object detection Overview
CNZ1002 is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
(1.0)
A'
+0.1

Slit width (0.5)

Unit : mm

3.8 ­0.2 1.45 0.9 1.45

Device center (C0.3) 2-0.25 *2.54

4.0 min. 5.1 2.8

3.9

Ultraminiature : 4.0 × 3.8 mm (height : 5.1 mm) Fast response : tr, tf = 35 µs (typ.) Highly precise position detection : 0.25 mm Gap width : 0.9 mm

Not soldered 1.0 max.

Features

; ;;;
(1.5)
SEC. A-A' 4.0 (C0.5) Gate the rest 0.3 max.
0 ø1.5 +0 .1 ­ 2-0.4

*2.54 2 4

1

3

Absolute Maximum Ratings (Ta = 25°C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF P D* 1 IC 6 50 75 20 35 6 75 Unit V mA mW mA V V mW °C °C °C

1 3 24 Pin connection (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15mm

*1

Input power derating ratio is 1.0mW/°C at Ta 25°C. *2 Output power derating ratio is 1.0mW/°C at Ta 25°C. *3 Soldering time is within 5 seconds.

Collector power dissipation Operating ambient temperature Temperature Storage temperature Soldering temperature

PC*2

Topr ­25 to +85 Tstg ­ 40 to +100 Tsol
*3

260

Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR I CEO VR = 3V VCE = 20V 65 35 Conditions IF = 20mA min typ 1.2 max 1.4 10 100 480 0.4 Unit V µA nA µA V µs

Collector current IC VCE = 5V, IF = 1.5mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 3mA, IC = 30µA characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000
*

Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)

;;

;;

50

RL

Note) The part number in the parenthesis shows conventional part number.

;; ;; ;;;
Soldering bath

Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO

more than 1mm

1

Transmissive Photosensors (Photo Interrupters)

CNZ1002

IF , IC -- Ta
60 60

IF -- V F
1.6 Ta = 25°C

VF -- Ta
IF = 50mA

IF , IC (mA)

50

IF

50

IF (mA)

VF (V)

1.2

10mA 1mA

Forward current, collector current

40

40

Forward current

Forward voltage
0 0.4 0.8 1.2 1.6 2.0 2.4

30 IC

30

0.8

20

20

0.4

10

10

0 ­ 25

0

20

40

60

80

100

0

0 ­ 40 ­ 20

0

20

40

60

80

100

Ambient temperature Ta (°C )

Forward voltage VF (V)

Ambient temperature Ta (°C )

IC -- I F
5 VCE = 5V Ta = 25°C 3 Ta = 25°C

IC -- VCE
120 IF = 15mA

IC -- Ta
VCE = 5V IF = 5mA

IC (mA)

IC (mA)

4

2 10mA

IC (%) Relative output current
1 5mA 2mA 0

100

80

3

Collector current

Collector current

60

2

40

1

20

0

0

5

10

15

20

25

0

1

2

3

4

5

6

0 ­ 40 ­ 20

0

20

40

60

80

100

Forward current IF (mA)

Collector to emitter voltage VCE (V)

Ambient temperature Ta (°C )

ICEO -- Ta
1 VCE = 20V 10 3

tr -- IC
VCC = 5V Ta = 25°C 10 3

tf -- IC
VCC = 5V Ta = 25°C

10 ­1

ICEO (µA)

10 2

10 2

tr (µs)

10 ­2

RL = 2k 1k 10 100

tf (µs)

RL = 2k 10 1k 100

Rise time

Dark current

10 ­3

1 10 ­4

Sig.IN Sig. OUT 50

VCC Sig. OUT RL 90% 10%

Fall time

1

Sig.IN Sig. OUT 50

VCC Sig. OUT RL 90% 10%

10 ­5 ­ 40 ­ 20

; ;;

0

20

40

60

80

100

10 ­1 10 ­2

tr

tf
10

;;
10 ­1 10 ­2 10 ­1

td

tr
1

td

tf
10

10 ­1

1

Ambient temperature Ta (°C )

Collector current IC (mA)

Collector current IC (mA)

2

CNZ1002

Transmissive Photosensors (Photo Interrupters)

IC -- d (1)
100 VCE = 5V Ta = 25°C IF = 1.5mA 100

IC -- d (2)

Relative output current IC (%)

80 Criterion 0 d 60

Relative output current IC (%)

80

60

40

40

20

20

0

0

1

2

3

4

0

0

0.5

Distance d (mm)

;; ;;
Criterion 0 d 1.0 1.5 2.0 2.5

VCE = 5V Ta = 25°C IF = 1.5mA

Distance d (mm)

3

Caution for Safety
Gallium arsenide material (GaAs) is used in this product.

DANGER

Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.