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Details, datasheet, quote on part number:ON1003
 
 
Part:ON1003
Category:Optoelectronics => Photosensors => Transmissive Photosensors
Description:Features = Ultra-small Type ;; I<SMALL><SUB>F</SUB></SMALL>(mA)(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V) = 35 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA)(mA) = 0.1 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(nA)(nA) = 100 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 35 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.4 ;; Package = PISMR104-002
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download ON1003 datasheet   File size : 72 kB
Request For quote:  Find where to buy ON1003
 



Datasheet text preview:
Transmissive Photosensors (Photo Interrupters)

CNA1303K (ON1003)
Photo Interrupter
A

For contactless SW, object detection Overview
CNA1303K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
1.5
(1.0)

Slit width (0.3)

Unit : mm

A' 4.2 1.2

1.5 Device center (C0.3) 2-0.25 *3.2
Not soldered 1.0 max. 3.9

4.0 min. 5.2 2.8

Features
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm) Fast response : tr, tf = 35 µs (typ.) Highly precise position detection : 0.15 mm Gap width : 1.2 mm

;;; ;
(1.5)

SEC. A-A' 4.2

(C0.5) Gate the rest 0.3 max.
0 ø1.5 +0 .1 ­ 2-0.5

*2.54 2 4

1

3

1 3 24 Pin connection (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15mm

Absolute Maximum Ratings (Ta = 25°C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF P D* 1 IC 6 50 75 20 35 6 75 Unit V mA mW mA V V mW °C °C °C
*1

Input power derating ratio is 1.0mW/°C at Ta 25°C. *2 Output power derating ratio is 1.0mW/°C at Ta 25°C. *3 Soldering time is within 5 seconds.

Collector power dissipation Operating ambient temperature Temperature Storage temperature Soldering temperature

PC*2

Topr ­25 to +85 Tstg ­ 40 to +100 Tsol
*3

260

Electrical Characteristics (Ta = 25°C)
Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Symbol VF IR I CEO VR = 3V VCE = 20V 100 35 Conditions IF = 20mA min typ 1.2 max 1.4 10 100 1300 0.4 Unit V µA nA µA V µs

Output characteristics Collector cutoff current

Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 50µA characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000
*

Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)

;;

;;

50

RL

Note) The part number in the parenthesis shows conventional part number.

;; ;; ;;;
Soldering bath

Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO

more than 1mm

1

CNA1303K

Transmissive Photosensors (Photo Interrupters)

IF , IC -- Ta
60 60

IF -- V F
1.6 Ta = 25°C

VF -- Ta

IF , IC (mA)

50

IF

50

IF = 50mA

IF (mA)

VF (V)

1.2

10mA

Forward current, collector current

40

40

Forward current

Forward voltage

1mA 0.8

30 IC

30

20

20

0.4

10

10

0 ­ 25

0

20

40

60

80

100

0

0

0.4

0.8

1.2

1.6

2.0

2.4

0 ­ 40 ­ 20

0

20

40

60

80

100

Ambient temperature Ta (°C )

Forward voltage VF (V)

Ambient temperature Ta (°C )

IC -- I F
5 VCE = 5V Ta = 25°C 3

IC -- VCE
120 Ta = 25°C 100

IC -- Ta
VCE = 5V IF = 5mA

IC (mA)

IC (mA)

4

IC (%)
2 IF = 20mA

80

3

Relative output current

Collector current

Collector current

60

2

15mA 1 10mA 5mA 2mA

40

1

20

0

0

5

10

15

20

25

0

0

1

2

3

4

5

6

0 ­ 40 ­ 20

0

20

40

60

80

100

Forward current IF (mA)

Collector to emitter voltage VCE (V)

Ambient temperature Ta (°C )

ICEO -- Ta
1 VCE = 20V 10 3

tr -- IC
VCC = 5V Ta = 25°C 10 3

tf -- IC
VCC = 5V Ta = 25°C

10 ­1

ICEO (µA)

10 2

10 2

tr (µs)

10 ­2

RL = 2k 1k 10 100

tf (µs)

RL = 2k 10 1k 100

Rise time

Dark current

10 ­3

1 10 ­4

Sig.IN Sig. OUT 50

VCC Sig. OUT RL 90% 10%

Fall time

1

Sig.IN Sig. OUT 50

VCC Sig. OUT RL 90% 10%

10 ­5 ­ 40 ­ 20

; ;;

0

20

40

60

80

100

10 ­1 10 ­2

tr

tf
10

;;
10 ­1 10 ­2 10 ­1

td

tr
1

td

tf
10

10 ­1

1

Ambient temperature Ta (°C )

Collector current IC (mA)

Collector current IC (mA)

2

Transmissive Photosensors (Photo Interrupters)

CNA1303K

IC -- d (1)
100 VCE = 5V Ta = 25°C IF = 5mA 100

IC -- d (2)
VCE = 5V Ta = 25°C IF = 5mA

Relative output current IC (%)

80 Criterion 0 d 60

Relative output current IC (%)

80

60

40

40

20

20

0

0

1

2

3

4

0

0

0.5

Distance d (mm)

; ;;
d 1.0 1.5 2.0 2.5

Criterion 0

Distance d (mm)

3

Caution for Safety
Gallium arsenide material (GaAs) is used in this product.

DANGER

Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.