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Details, datasheet, quote on part number:ON1105
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| Part: | ON1105 |
| Category: | Optoelectronics => Photosensors => Transmissive Photosensors |
| Description: | Features = High Resolution ;; I<SMALL><SUB>F</SUB></SMALL>(mA)(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA)(mA) = 0.3 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(nA)(nA) = 200 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 6 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.3 ;; Package = PISTR104-007 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON1105 datasheet File size : 75 kB |
| Request For quote: | Find where to buy ON1105
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Datasheet text preview:
Transmissive Photosensors (Photo Interrupters)
Part number notation
The part number noten on the following pages is a conventional part number. The new Matsushita global number is:
CNZ1105
2
Transmissive Photosensors (Photo Interrupters)
ON1105
Photo Interrupter
Unit : mm
For contactless SW, object detection Outline
O N 11 0 5 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
Mark for indicating LED side
10.0±0.2 2.5±0.2
25.0±0.35 14.3±0.3 3.0±0.2 A
Device center 0.5±0.1
A'
7.0 min.
4- 0.45±0.2 *10.0 0.4
+0.1
Highly precise position detection : 0.3 mm Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature
6.2±0.2
Features
2
19.0±0.2 3
1
4 2 3
,,, ,
*2.54±0.2 SEC. A-A' 2-ø3.2±0.2 1
3.0±0.2
4
Absolute Maximum Ratings (Ta = 25°C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF P D* 1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V mW °C °C
Pin connection (Note) * is dimension at the root of leads
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2
*1
Topr 25 to +85 Tstg 30 to +100
Input power derating ratio is 1.0 mW/°C at Ta 25°C. *2 Output power derating ratio is 1.33 mW/°C at Ta 25°C.
Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Collector cutoff current Output characteristics Collector to emitter capacitance Symbol VF IR Ct I CEO CC VR = 3V VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f = 1MHz 0.3 6 0.3 5 50 200 Conditions IF = 50mA min typ 1.2 max 1.5 10 Unit V µA pF nA pF mA µs V
Collector current IC VCE = 10V, IF = 20mA Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
,,
,,
50
RL
1
Transmissive Photosensors (Photo Interrupters)
ON1105
IF , IC -- Ta
60 60
IF -- VF
10 Ta = 25°C
IC -- IF
VCE = 10V Ta = 25°C
IF , IC (mA)
50
IF
50
IF (mA)
IC (mA) Collector current
1
Forward current, collector current
40
40
Forward current
30 IC
30
10 1
20
20
10 2
10
10
0 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10 3 10 1
1
10
10 2
Ambient temperature Ta (°C )
Forward voltage VF (V)
Forward current IF (mA)
VF -- Ta
1.6 10 2
IC -- VCE
160 VCC = 5V Ta = 25°C IF = 50mA
IC -- Ta
VCE = 10V IF = 20mA
IC (mA)
VF (V)
1.2
10
IC (%) Relative output current
1 10 10 2
120
Forward voltage
Collector current
10mA 0.8
1
80
0.4
10 1
40
0 40 20
0
20
40
60
80
100
10 2 10 1
0 40 20
0
20
40
60
80
100
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C )
ICEO -- Ta
10 10 3
tr -- IC
VCC = 10V Ta = 25°C 100
IC -- d
Criterion 0 d 80
1
ICEO (µA)
10 2
tr (µs)
10 1
RL = 1k 10 500 100
Relative output current
IC (%)
Sig.IN VCC Sig. V1 OUT V2 V2 RL 90% 10% V1 50
60
Dark current
10 2
VCE = 24V
10V
Rise time
40
1 10 3
20
10 4 40 20
, ,,
10 1 10 2 10 1 1
tr
td
tf
10 0 0 1 2 3 4 5 6
0
20
40
60
80
100
Ambient temperature Ta (°C )
Collector current IC (mA)
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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