|
Details, datasheet, quote on part number:ON1112
| |
| Part: | ON1112 |
| Category: | Optoelectronics => Photosensors => Transmissive Photosensors |
| Description: | Features = High Resolution Capacity;; Thin Type ;; I<SMALL><SUB>F</SUB></SMALL>(mA)(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA)(mA) = 0.3 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(nA)(nA) = 200 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 6 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.3 ;; Package = PISTR104-013 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON1112 datasheet File size : 71 kB |
| Request For quote: | Find where to buy ON1112
|
| |
Datasheet text preview:
Transmissive Photosensors (Photo Interrupters)
CNZ1111, CNZ1112 (ON1111, ON1112)
Photo Interrupters
CNZ1111
Unit : mm
0.45±0.1
For contactless SW, object detection Overview
C N Z 1111 and CNZ1112 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
Mark for indicating LED side
2.0±0.2 2.2±0.2
25.0±0.35 13.0±0.3 5.0±0.2 A
10.0±0.2 2.5±0.2
0.45±0.1 Device center
A'
Features
Highly precise position detection : 0.3 mm Wide gap between emitting and detecting elements, suitable for thick plate detection Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature
6.0 min.
(10.0) 19.0±0.2
2-0.45±0.2 (2.54) SEC. A-A' 3 2-ø3.2±0.2 2 3
2
6.2±0.2
1
4 1 Pin connection 4
(Note) (
) Dimension is reference
Absolute Maximum Ratings (Ta = 25°C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF P D* 1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V mW °C °C
CNZ1112
Unit : mm
0.45±0.1
Mark for indicating LED side
2.0±0.2 2.2±0.2
13.0±0.3 5.0±0.2 A
10.0±0.2 2.5±0.2
0.45±0.1 Device center
Collector power dissipation Temperature
*1
PC*2
6.0 min.
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Operating ambient temperature Storage temperature
A' (10.0) 2
2-0.45±0.2 (2.54) 3 SEC. A-A'
Tstg 30 to +100
6.2±0.2
Topr 25 to +85
Input power derating ratio is 1.0 mW/°C at Ta 25°C. *2 Output power derating ratio is 1.33 mW/°C at Ta 25°C.
(Note) (
1
4
2
3
1 Pin connection ) Dimension is reference
4
Note) The part numbers in the parenthesis show conventional part number.
1
Transmissive Photosensors (Photo Interrupters)
Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Collector cutoff current Output characteristics Collector to emitter capacitance Symbol VF IR I CEO CC VR = 3V VCE = 10V VCE = 10V, f = 1MHz 0.3 Conditions IF = 50mA
CNZ1111,CNZ1112
min
typ 1.2
max 1.5 10 200
Unit V µA nA pF mA µs
5 6 0.3
Collector current IC VCE = 10V, IF = 20mA Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*
V
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
;;
;;
50
RL
IF , IC -- Ta
60 60
IF -- V F
10 Ta = 25°C
IC -- I F
VCE = 10V Ta = 25°C
IF , IC (mA)
50
IF
50
IC (mA) Collector current
Forward current, collector current
IF (mA)
1
40
40
Forward current
30 IC
30
10 1
20
20
10 2
10
10
0 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10 3 10 1
1
10
10 2
Ambient temperature Ta (°C )
Forward voltage VF (V)
Forward current IF (mA)
2
CNZ1111,CNZ1112
Transmissive Photosensors (Photo Interrupters)
VF -- Ta
1.6 10 2
IC -- VCE
160 Ta = 25°C
IC -- Ta
VCE = 10V IF = 20mA
IC (mA)
VF (V)
1.2
IF = 50mA
10
IC (%)
IF = 30mA 20mA 10mA
120
Forward voltage
Collector current
10mA 0.8
1
Relative output current
10 2
80
0.4
10 1
40
0 40 20
0
20
40
60
80
100
10 2 10 1
1
10
0 40 20
0
20
40
60
80
100
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C )
ICEO -- Ta
10 10 3
tr -- IC
VCC = 10V Ta = 25°C 100
IC -- d
VCE = 10V Ta = 25°C IF = 20mA
1
IC (%)
80 Criterion 0 d 60
ICEO (µA)
10 2 VCE = 24V 10V
tr (µs)
10 1
RL = 1k 10 500
10 2
Relative output current
Dark current
Rise time
100 1 Sig.IN VCC Sig. V1 OUT V2 V2 RL 90% 10%
40
10 3 V1 50
20
; ;
10 1 10 2 10 1
10 4 40 20
tr
1
td
tf
10 0 0 1 2 3 4 5 6
0
20
40
60
80
100
Ambient temperature Ta (°C )
Collector current IC (mA)
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
|
|
