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Details, datasheet, quote on part number:ON1113
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| Part: | ON1113 |
| Category: | Optoelectronics => Photosensors => Transmissive Photosensors |
| Description: | Features = High Resolution Capacity;; Thin Type ;; I<SMALL><SUB>F</SUB></SMALL>(mA)(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA)(mA) = 0.3 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(nA)(nA) = 200 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 6 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.5 ;; Package = PISTR104-012 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON1113 datasheet File size : 62 kB |
| Request For quote: | Find where to buy ON1113
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Datasheet text preview:
Transmissive Photosensors (Photo Interrupters)
CNA1011K (ON1113)
Photo Interrupter
For contactless SW, object detection Overview
CNA1011K is a small size photocoupler package consisting of a high efficiency GaAs infrared light emitting diode used as the light emitting element, and a high sensitivity phototransistor used as the light detecting element.
8.5
13.6 Mark for indicating LED side ø1.5
Unit : mm
6.2
7.0±0.3
6.2
Features
8.8 min.
Highly precise position detection : 0.3 mm Wide gap between emitting and detecting elements, suitable for thick plate detection Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature
A' (10.1)
4- 0.45 2-2.0
2-ø3.2±0.2 (2.54)
2
3 2 3
1
4 1 4 Pin connection
Absolute Maximum Ratings (Ta = 25°C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF P D* 1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V mW °C °C
(Note) (
) Dimension is reference
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2
*1
Topr 25 to +85 Tstg 30 to +100
Input power derating ratio is 1.0 mW/°C at Ta 25°C. *2 Output power derating ratio is 1.33 mW/°C at Ta 25°C.
Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Collector cutoff current Output characteristics Collector to emitter capacitance Collector current Symbol VF IR Ct I CEO CC IC VR = 3V VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f = 1MHz VCE = 10V, IF = 20mA, RL = 100 0.3 6 0.5 5 50 200 Conditions IF = 50mA min typ 1.2 max 1.5 10 Unit V µA pF nA pF mA µs V
Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
;; ;;
50
Note) The part number in the parenthesis shows conventional part number.
;; ;
SEC. A-A'
2.2±0.3 2.2±0.2
7.0±0.2 5.0±0.2 A 0.4
Device center
19.2 13.0±0.15 0.45±0.15
1
CNA1011K
Transmissive Photosensors (Photo Interrupters)
IF , IC -- Ta
60 60
IF -- V F
10 Ta = 25°C
IC -- I F
VCE = 10V Ta = 25°C
IF , IC (mA)
50
IF
50
IC (mA) Collector current
Forward current, collector current
IF (mA)
1
40
40
Forward current
30 IC
30
10 1
20
20
10 2
10
10
0 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10 3 10 1
1
10
10 2
Ambient temperature Ta (°C )
Forward voltage VF (V)
Forward current IF (mA)
VF -- Ta
1.6 10 2
IC -- VCE
160 Ta = 25°C
IC -- Ta
VCE = 10V IF = 20mA
IC (mA)
VF (V)
1.2
IF = 50mA 10mA 1mA
10
IC (%)
IF = 30mA
120
0.8
1
Relative output current
10 2
Forward voltage
Collector current
20mA 10mA
80
0.4
10 1
40
0 40 20
0
20
40
60
80
100
10 2 10 1
1
10
0 40 20
0
20
40
60
80
100
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C )
ICEO -- Ta
10 10 3
tr -- IC
VCC = 10V Ta = 25°C 100
IC -- d
VCE = 10V Ta = 25°C IF = 20mA
1
IC (%)
80 Criterion 0 d 60
ICEO (µA)
10 2 VCE = 24V 10V
tr (µs)
10 1
RL = 1k 10 500 100
10 2
Relative output current
Dark current
Rise time
40
1 10 3
Sig.IN
VCC Sig. V1 OUT V2 V2 RL 90% 10%
20
10 4 40 20
; ;;
10 1 10 2 10 1 1
V1 50
tr
td
tf
10 0 0 1 2 3 4 5 6
0
20
40
60
80
100
Ambient temperature Ta (°C )
Collector current IC (mA)
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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