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Details, datasheet, quote on part number:ON1120
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| Part: | ON1120 |
| Category: | Optoelectronics => Photosensors => Transmissive Photosensors |
| Description: | Features = Wide Gap ;; I<SMALL><SUB>F</SUB></SMALL>(mA)(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA)(mA) = 1 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(nA)(nA) = 200 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 6 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.4 ;; Package = PISTR104-014 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON1120 datasheet File size : 46 kB |
| Request For quote: | Find where to buy ON1120
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Datasheet text preview:
Transmissive Photosensors (Photo Interrupters)
CNZ1120 (ON1120)
Photo Interrupter
For contactless SW, object detection Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
19.0±0.35 10.0±0.3 A
14.0±0.2 3.0±0.2 (2.0)
Unit : mm
6.2±0.25
2-C0.5
Features
3.0 min.
Wide gap between emitting and detecting elements, suitable for thick plate detection Gap : 10mm Fast response : tr, tf = 6 µs (typ.) The external case is molded using visible light cutoff resin. The case has no openings, so the photosensor is not easily susceptible to output attenuation resulting from dust or particles
A' (15.5)
2-0.45 (2.54) SEC. A-A'
2
3 2 3
1
4 1 Pin connection 4
Absolute Maximum Ratings (Ta = 25°C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF P D* 1 IC 3 50 75 20 20 5 100 5 to +60 15 to +65 Unit V mA mW mA V V mW °C °C
(Note) ( ) Dimension is reference
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2 Topr Tstg
*1
Input power derating ratio is 1.0 mW/°C at Ta 25°C. *2 Output power derating ratio is 1.33 mW/°C at Ta 25°C.
Electrical Characteristics (Ta = 25°C)
Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Collector cutoff current Collector current Symbol VF IR I CEO CC IC VR = 3V VCE = 10V, IF = 0mA, ID = 0mA*1 VCE = 10V, f = 1MHz VCE = 10V, IF = 20mA, RL = 100 1.0 6 0.4 5 Conditions IF = 50mA min typ 1.2 max 1.5 10 200 Unit V µA nA pF mA µs V
Output characteristics Collector to emitter capacitance
Transfer Response time tr , tf*2 VCC = 10V, IC = 1mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*1 *2
ID : Leakage current due to scattered light Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
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;;
50
RL
Note) The part number in the parenthesis shows conventional part number.
1
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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