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Details, datasheet, quote on part number:ON2152
 
 
Part:ON2152
Category:Optoelectronics => Photosensors => Photoreflectors
Description:Featuresapplications = High Speed Response ;; I<SMALL><SUB>F</SUB></SMALL>(mA) = 100 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V)(V) = 20 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA) = 0.8 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(µA)(µA) = 2 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 8 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.6 ;; Package = PRSTR104-001
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download ON2152 datasheet   File size : 66 kB
Request For quote:  Find where to buy ON2152
 



Datasheet text preview:
Reflective Photosensors (Photo Reflectors)

CNZ2152 (ON2152)
Reflective Photosensor
Overview
CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device.
3.2±0.2

Mark for indicating LED side ø1.5

Unit : mm

8.0±0.2

3.5±0.2 01 1.0 +0..2 ­

01 14.0 +0..2 ­ 16.0±0.3

ø2.2±0.2

Features
Fast response High SN ratio High sensitivity

7.0 min.

01 ø0.9+0..2 ­ 4-ø0.45

Applications
Detection of paper, film and cloth Detection of coin and bill Optical mark reading Detection of position and edge

(10.0) 2
6.2±0.2

Start, end mark detection of magnetic tape

1

Absolute Maximum Ratings (Ta = 25°C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD *1 VC E O VE C O IC PC*2 Topr 3 100 150 20 3 30 150 ­25 to +85 Unit V mA mW V V mA mW °C °C

(Note) ( ) Dimension is reference

*1

Tstg ­30 to +100

Input power derating ratio is 2.0 mW/°C at Ta 25°C. *2 Output power derating ratio is 2.0 mW/°C at Ta 25°C.

Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Transfer characteristics Response time
*1 *2 Transfer

Symbol VF IR ICEO IC*1 IC*2 VR = 3V VCE = 10V

Conditions IF = 100mA

min

VCC = 5V, IF = 20mA, RL = 100

0.8

tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100
*3

Collector to emitter saturation voltage VCE(sat) IF = 100mA, IC = 1mA
characteristics measurement circuit (Ambient light is shut off completely)
IC VCC d = 5 mm
*1 *2

IF

*4

;; ;; ;;; ; ; ;; ;; ;

Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value.

RL

Test paper

Standard white paper (reflective ratio 90%) Tracing paper (paper SM-1 for 2nd original paper) Note) The part number in the parenthesis shows conventional part number.

; ;;
3 4 1 23 4 Pin connection

typ 1.25 0.05 3 500 8

;;;; ;;
(2.54)

10.0±0.2

max 1.5 10 2

1.0(typ.)

Unit V µA µA mA µA µs

0.6

V

1

CNZ2152

Reflective Photosensors (Photo Reflectors)

IF , IC -- Ta
120 120

IF -- V F
1.6 Ta = 25°C

VF -- Ta

IF , IC (mA)

100

IF

100

IF = 100mA

IF (mA)

Forward current, collector current

80

80

VF (V)

1.2 50mA

Forward current

Forward voltage
0 0.4 0.8 1.2 1.6 2.0 2.4

60

60

0.8

40 IC 20

40

0.4

20

0 ­ 25

0

20

40

60

80

100

0

0 ­ 40 ­ 20

0

20

40

60

80

100

Ambient temperature Ta (°C )

Forward voltage VF (V)

Ambient temperature Ta (°C )

IC -- I F
10 2 VCC = 5V Ta = 25°C RL = 100 (1) White paper (Reflective ratio 90%) (2) Tracing paper (Paper SM - 1 for 2nd original paper) (1) 1 16

IC -- VCE
160 IF = 100mA 80mA Ta = 25°C

IC -- Ta
VCC = 5V IF = 20mA RL = 100 120

IC (mA)

10

IC (mA)

12

60mA 50mA 40mA

Relative output current

Collector current

Collector current

IC (%)
20mA 10mA 20 24

8

30mA

80

(2) 10 ­1

4

40

10 ­2 10 ­1

1

10

10 2

0

0

4

8

12

16

0 ­ 40 ­ 20

0

20

40

60

80

100

Forward current IF (mA)

Collector to emitter voltage VCE (V)

Ambient temperature Ta (°C )

ICEO -- Ta
10 3 10 3

tr -- IC
VCC = 10V Ta = 25°C 16

IC -- d
VCC = 5V Ta = 25°C IF = 20mA RL = 100 12

ICEO (µA)

10 2

tr (µs)

10

Mirror

Collector current

Rise time

Dark current

10

1

VCE = 25V

10V

100

8

1 10 ­1

Sig.IN

VCC Sig. V1 OUT V2 V2 RL 90% 10%

4

White paper (Reflective ratio 90%)

10 ­2 ­ 40 ­ 20

; ;;

V1 50

0

20

40

60

80

100

10 ­1 10 ­2

tr

td

tf
10 0 0 2 4 6 8 10 12

10 ­1

1

Ambient temperature Ta (°C )

Collector current IC (mA)

2

; ;
d

RL = 1k

IC (mA)

10 2

Distance d (mm)

Caution for Safety
Gallium arsenide material (GaAs) is used in this product.

DANGER

Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.