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Details, datasheet, quote on part number:ON2175
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| Part: | ON2175 |
| Category: | Optoelectronics => Photosensors => Photoreflectors |
| Description: | Featuresapplications = Dat Tape-end Detection ;; I<SMALL><SUB>F</SUB></SMALL>(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V)(V) = 30 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA) = 0.03 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(µA)(µA) = 0.2 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 6 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.5 ;; Package = PRSTR104-005 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON2175 datasheet File size : 47 kB |
| Request For quote: | Find where to buy ON2175
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Datasheet text preview:
Reflective Photosensors (Photo Reflectors)
CNB1304H (ON2175)
Reflective Photosensor
8.3±0.3 6.0±0.15
Tape end sensor for DAT Overview
CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor.
(R2.3) 4.0±0.3 ø2.2±0.3 2-ø1.2±0.15 (4-R0.3)
0 5.0 +0.3 6.5±0.3
Unit : mm
3.75±0.15
5.0 min. 8.3±0.3 1.0±0.3 4.0±0.3 (C0.2)
0 8.0 +0.3 7.0±0.3
2-ø1.2±0.15
Features
Fast response Small size and light weight
0 ø1.2 +0.3 2-0.4±0.2 (3.75)
3.0±0.3
4
Absolute Maximum Ratings (Ta = 25°C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature
*1 *2
Symbol Ratings VR IF PD *1 IC VC E O VE C O PC*2 Topr 3 50 75 20 30 5 100 25 to +85
Unit V mA mW mA V V mW °C °C
3
(Note) ( ) Dimension is reference
Operating ambient temperature Storage temperature
Tstg 30 to +100
Input power derating ratio is 1.0 mW/°C at Ta 25°C. Output power derating ratio is 1.34 mW/°C at Ta 25°C.
Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Symbol VF IR ICEO IC*1 IF = 50mA VR = 3V VCE = 10V VCE = 5V, IF = 20mA, RL = 100 30 6 0.5 Conditions min typ max 1.5 10 0.2 Unit V µA µA µA µs V
Transfer Response time tr , tf*2 VCC = 10V, IC = 0.5mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*1 I C
Measurement method
(Unit : mm ) 1 2.5 1
*2
Switching time measurement circuit
VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf
Sig.IN
; ;;;;;; ;;;;;; ;;
2 1.5
prism
CNB1304
;; ;;; ;
50
RL
td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
; ;;; ;; ;
02 2-0.15 +0..1 (3.75)
(C0.3)
2
1 1 23 4 Pin connection
1
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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