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Details, datasheet, quote on part number:ON2179
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| Part: | ON2179 |
| Category: | Optoelectronics => Photosensors => Photoreflectors |
| Description: | Featuresapplications = High Speed Response ;; I<SMALL><SUB>F</SUB></SMALL>(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V)(V) = 20 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA) = 0.18 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(µA)(µA) = 0.2 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 20 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 0.5 ;; Package = PRSTR104-004 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON2179 datasheet File size : 58 kB |
| Request For quote: | Find where to buy ON2179
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Datasheet text preview:
Reflective Photosensors (Photo Reflectors)
CNZ2179 (ON2179)
Reflective Photosensor
Unit : mm
Overview
CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor is used as the light detecting element.
5.2
13.0
Long focal distance : 6 mm (typ.) Visible light cutoff resin is used
(7.6) 1
(2-0.5) (2-0.5) (2.54) 4
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature
*1 *2
Symbol Ratings VR IF PD *1 IC VC E O VE C O PC*2 Topr Tstg 3 50 75 20 20 5 100 25 to +80 30 to +85
Unit V mA mW mA V V mW °C °C
Reverse voltage (DC)
2
(Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference
Operating ambient temperature Storage temperature
Input power derating ratio is 1.25 mW/°C at Ta 25°C. Output power derating ratio is 1.67 mW/°C at Ta 25°C.
Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO IC*1 IF = 50mA VR = 3V VCE = 10V 180 20 0.5 Conditions min typ 1.3 max 1.5 10 0.2 1500 Unit V µA µA µA µs V
Collector current VCC = 5V, IF = 20mA, RL = 100 Transfer Response time tr*2 , tf*3 VCC = 10V, IC = 0.1mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*1
Transfer characteristics measurement circuit (Ambient light is shut off completely.)
IC VCC
*2
*3
IF
Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value.
90% 10% tr tf
;; ; ;; ;; ;
RL
;;
;;; ;;; ;
d = 5 mm
Standard white paper (Reflective ratio 90%)
Note) The part number in the parenthesis shows conventional part number.
; ;; ;
3 1 23 4 Pin connection
Absolute Maximum Ratings (Ta = 25°C)
10 min.
Features
8.0
0.85max.
1
CNZ2179
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- V F
1.6 Ta = 25°C
VF -- Ta
IF , IC (mA)
50
IF
50
IF = 50mA
IF (mA)
VF (V)
1.2
Forward current, collector current
10mA
40
40
Forward current
Forward voltage
1mA 0.8
30 IC
30
20
20
0.4
10
10
0 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 40 20
0
20
40
60
80
100
Ambient temperature Ta (°C )
Forward voltage VF (V)
Ambient temperature Ta (°C )
IC -- I F
10 2 VCE = 5V Ta = 25°C 10 2
IC -- VCE
Ta = 25°C 160
IC -- Ta
VCC = 5V IF = 20mA RL = 100 120
IC (mA)
10
IC (mA)
10
1
1 IF = 30mA 20mA 10 1 10mA
Relative output current
10 2
Collector current
Collector current
IC (%)
80
10 1
40
10 2 10 1
1
10
10 2
10 2 10 1
1
10
0 40 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C )
ICEO -- Ta
10 VCE = 10V 10 3
tr -- IC
VCC = 10V Ta = 25°C 100
IC -- d
IC (%) Relative output current
RL = 1k 500 100
80
ICEO (µA)
1
10 2
tr (µs)
60
Dark current
Rise time
10
1
10
40
10 2
1
20
10 3 40 20
0
20
40
60
80
100
10 1 10 2
10 1
1
10
0
VCC = 5V Ta = 25°C RL = 100 IF = 20mA 0 4 8 12 16
Ambient temperature Ta (°C )
Collector current IC (mA)
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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