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Details, datasheet, quote on part number:ON2270
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| Part: | ON2270 |
| Category: | Optoelectronics => Photosensors => Photoreflectors |
| Description: | Featuresapplications = Visible Light Cut;; Small Size;; Thin Type ;; I<SMALL><SUB>F</SUB></SMALL>(mA) = 50 ;; V<SMALL><SUB>CEO</SUB></SMALL>(V)(V) = 20 ;; I<SMALL><SUB>C</SUB></SMALL>min.(mA) = 0.46 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(µA)(µA) = 1 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(µs) = 150 ;; V<SMALL><SUB>CE(sat)</SUB></SMALL>max.(V) = 1.5 ;; Package = PRSMW104-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download ON2270 datasheet File size : 63 kB |
| Request For quote: | Find where to buy ON2270
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Datasheet text preview:
Reflective Photosensors (Photo Reflectors)
CNB2301 (ON2270)
Reflective Photosensor
Overview
CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo detector in a single resin package.
Unit : mm
Mark for indicating anode side C0.5 1 3
9.0±1.0
2.0±0.2
Chip center
Features
Ultraminiature : 2.7 × 3.4 mm Visible light cutoff resin is used High current-transfer ratio
9.0±1.0
2.7±0.2 0.4
4-0.7 4-0.5 ±0.1 2 1.8
2.0±0.2
4
0.5 0.15
Applications
Detection of paper, film and cloth Detection of rotary positioning Detection of position and edge Liquid level sensor
1.5±0.2
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25°C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD *1 IC VC E O VE C O PC*2 Topr 3 50 75 30 20 5 75 25 to +85 Unit V mA mW mA V V mW °C °C
*1
Tstg 30 to +100
Input power derating ratio is 1.0 mW/°C at Ta 25°C. *2 Output power derating ratio is 1.0 mW/°C at Ta 25°C.
Electrical Characteristics (Ta = 25°C)
Parameter Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Collector current Leakage current Transfer characteristics Response time
*1 I
Symbol VF IR Ct ICEO ID tr
*3 ,
Conditions IF = 50mA VR = 3V VR = 0V, f = 1MHz VCE = 10V
min
IC*1, *2 VCC = 5V, IF = 2mA, RL = 100, d = 1mm VCC = 5V, IF = 2mA, RL = 100
*4
0.46 150
tf
VCC = 10V, IC = 1mA, RL = 100
*2 Output
Collector to emitter saturation voltage VCE(sat) IF = 5mA, IC = 0.5mA
C
classifications Class IC (mA) Q 0.46 to 1.75 R 1.3 to 4.95 S 3.15 to 12.0
current measurement method
*3 Time
Note) The part number in the parenthesis shows conventional part number.
;; ;;
IF IC RL V CC
required for the output current to increase from 10% to 90% of its final value *4 Time required for the output current to decrease from 90% to 10% of its initial value
; ;;
1 23 4 Pin connection
3.4±0.3
typ 1.3 0.01 30
max 1.5 10 1.0 12.0 2.0 1.5
Unit V µA pF µA mA µA µs V
; ;;; ; ;;; ;;; ;;;
Evaporated Al Glass plate (t = 1mm)
1
CNB2301
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- V F
1.6 Ta = 25°C
VF -- Ta
IF , IC (mA)
50
IF
50
IF = 50mA
IF (mA)
VF (V)
1.2
10mA
Forward current, collector current
40 IC
40
Forward current
Forward voltage
1mA 0.8
30
30
20
20
0.4
10
10
0 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 40 20
0
20
40
60
80
100
Ambient temperature Ta (°C )
Forward voltage VF (V)
Ambient temperature Ta (°C )
IC -- I F
10 3 VCC = 5V Ta = 25°C RL = 100 d = 1mm 10 2
IC -- VCE
160 Ta = 25°C VCC = 5V IF = 2mA RL = 100 120
IC -- Ta
IC (mA)
10 2
IC (mA)
10
IF = 10mA
10
1 2mA
Relative output current
10 2
5mA
Collector current
Collector current
IC (%)
80
1
10 1
1mA
40
10 1
1
10
10 2
10 3
10 2 10 1
1
10
0 40 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C )
ICEO -- Ta
10 2 VCE = 10V 10 4
tr -- IC
VCC = 10V Ta = 25°C 100
IC -- d
80
ICEO (µA)
10
10 3
RL = 1k 500
tr (µs)
Relative output current
60
Dark current
Rise time
1
10 2
100
40
10 1
10
20
10 2 40 20
0
20
40
60
80
100
1 10 2
10 1
1
10
0
0
Ambient temperature Ta (°C )
Collector current IC (mA)
2
; ;;
d 2 4 6 8 10
VCC = 5V IF = 2mA
IC (%)
Distance d (mm)
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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