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Details, datasheet, quote on part number:PN102
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| Part: | PN102 |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 1.5 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.3 ;; Q Typ.(deg) = 10 ;; Package = MTGLR103-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN102 datasheet File size : 53 kB |
| Request For quote: | Find where to buy PN102
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Datasheet text preview:
Phototransistors
PNZ102 (PN102)
Silicon NPN Phototransistor
ø4.6±0.15
Unit : mm
Glass lens
For optical control systems Features
High sensitivity
12.7 min. 6.3±0.3
Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Base pin for easy circuit design TO-18 standard type package
3-ø0.45±0.05 2.54±0.25
1. 0± 0. 2 15
45±
0±
0.
3°
1.
3 21
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V CBO V ECO V EBO IC PC Topr Tstg Ratings 30 40 5 5 50 150 25 to +85 30 to +100 Unit V V V V mA mW °C °C
ø5.75 max.
1: Emitter 2: Base 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Response time Collector saturation voltage
*1 *2
Symbol ICEO ICE(L) P tr, tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 100 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100 ICE(L) = 1mA, L = 500 lx*1
min 1.5
typ 5 3.5 800 10 3 0.2
max 300
Unit nA mA nm deg. µs
0.4
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ102
PC -- Ta
200 20
IC -- VCE
30µA 25µA 20 Ta = 25°C 1000 lx
ICE(L) -- VCE
500 lx Ta = 25°C T = 2856K
PC (mW)
IC (mA)
160
16
ICE(L) (mA)
16 400 lx 300 lx 12 PC = 150mW 200 lx 8 150 lx
Collector power dissipation
20µA 12 15µA PC = 150mW 8 10µA
80
Collector photo current
120
Collector current
40
4
IB = 5µA
4
100 lx
L = 50 lx 0 20 0 20 40 60 80 100 0 0 10 20 30 0 0 10 20 30
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Collector to emitter voltage VCE (V)
ICE(L) -- L
10 2
ICEO -- Ta
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K 10 3 VCE = 10V 10 2
ICE(L) -- Ta
VCE = 10V T = 2856K
ICE(L) (mA)
ICEO (nA)
10
10 2
Collector photo current
Collector photo current
L = 500 lx 10 200 lx 100 lx
Dark current
1
10
10 1
1
10 2
1
10
10 2
10 3
10 1 40
0
40
80
120
1 40
0
40
80
120
Illuminance L (lx)
Ambient temperature Ta (°C )
Ambient temperature Ta (°C )
Spectral sensitivity characteristics
100 Ta = 25°C 100
Directivity characteristics
10 3
tr -- ICE(L)
VCC = 10V Ta = 25°C
S (%)
S (%)
80
80 10 2
tr (µs)
Relative sensitivity
Relative sensitivity
60
60
RL = 1k 10 500 100 1
40
40
20
20
Rise time
0 200
400
600
800
1000
0 30
20
10
0
10
20
30
10 1 10 1
1
10
10 2
Wavelength (nm)
Angle
(deg.)
Collector photo current ICE(L) (mA)
2
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