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Details, datasheet, quote on part number:PN106
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| Part: | PN106 |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.3 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.1 ;; Q Typ.(deg) = 10 ;; Package = MTGLR103-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN106 datasheet File size : 348 kB |
| Request For quote: | Find where to buy PN106
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Datasheet text preview:
Phototransistors
PNZ106 (PN106)
Silicon NPN Phototransistor
ø4.6±0.15
Unit : mm
Glass lens
For optical control systems Features
High sensitivity
12.7 min. 6.3±0.3
Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input Signal mixing capability using base pin
3-ø0.45±0.05 2.54±0.25
1. 0± 0. 2 15
45±
0±
0.
3°
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V CBO V ECO V EBO IC PC Topr Tstg Ratings 30 40 5 5 20 100 25 to +85 30 to +100 Unit V V V V mA mW °C °C
1.
3 21
ø5.75 max.
1: Emitter 2: Base 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol ICEO ICE(L) P tr*2 tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 ICE(L) = 1 mA, L = 1000 lx*1 lx*1
min 0.3
typ 1 0.6 800 10 3.5 5.0 0.2
max 100
Unit nA mA nm deg. µs µs
0.4
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ106
PC -- Ta
120 8
ICE(L) -- VCE
10 2 Ta = 25°C
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K 10
PC (mW)
100
ICE(L) (mA)
6 L = 1000 lx
Collector power dissipation
80
Collector photo current
Collector photo current
60
4
700 lx 500 lx
1
40
2
300 lx 100 lx
10 1
20
0 20
0
20
40
60
80
100
0
0
4
8
12
16
50 lx 20 24
10 2
1
10
10 2
10 3
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 3 VCE = 10V 10
ICE(L) -- Ta
VCE = 10V T = 100 lx 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICEO (nA)
1
1
Collector photo current
Relative sensitivity
0 40 80 120
10
S (%)
10 2
ICE(L) (mA)
80
60
Dark current
40
10 1
10 1
20
10 2 20
0
20
40
60
80
100
10 2 40
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 10° 20° 10 3
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 3
tf -- ICE(L)
VCC = 10V Ta = 25°C
Relative sensitivity S(%)
30°
10 2
10 2
tr (µs)
tf (µs)
RL = 1k 10 500 100 1
40° 50° 60° 70° 80° 90°
RL = 1k 10 500 100 1
Rise time
10 1 10 1
Fall time
10 2
1
10
10 1 10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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