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Details, datasheet, quote on part number:PN108
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| Part: | PN108 |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 5 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 2 ;; Q Typ.(deg) = 10 ;; Package = MTGLR103-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN108 datasheet File size : 316 kB |
| Request For quote: | Find where to buy PN108
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Datasheet text preview:
Phototransistors
PNZ107, PNZ108 (PN107, PN108)
Silicon NPN Phototransistors
PNZ107
4.6 0.15 Glass lens
Unit : mm
For optical control systems Features
High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package
.1 5 00 00 1.
12.7 min.
6.3 0.3
2- 0.45 0.05
2.54 0.25
.2
45 3
1.
2
1
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature
*
5.75 max.
Symbol V CEO V CBO
*
Ratings 20 30 3 5 30 150 25 to +85 30 to +100
Unit V V V mA mW
12.7 min. 6.3 0.3
1: Emitter 2: Collector
PNZ108
4.6 0.15 Glass lens
Unit : mm
V ECO VEBO* IC PC Topr Tstg
V
°C °C
3- 0.45 0.05
PNZ108 only
1. 00
2.54 0.25
.2
.1 5
45 3
1.
3 2
00
1
1: Emitter 2: Base 3: Collector
5.75 max.
Note) The part numbers in the parenthesis show conventional part number.
1
Phototransistors
PNZ107, PNZ108
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol IC E O ICE(L) P tr * 2 tf
*2
Conditions VCE = 10V VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100 ICE(L) = 1mA, L = 500 lx*1 lx*1
min 5
typ 0.05 900 10 5 6 0.3
max 2 15
Unit µA mA nm deg. µs µs
VCE(sat)
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
PC -- Ta
200 20
ICE(L) -- VCE
Ta = 25°C T = 2856K
lx lx
ICE(L) -- L
10 3
PC (mW)
ICE(L) (mA)
L
160
16
ICE(L) (mA)
00
=
0 l 20 x 0 lx
10
50
VCE = 10V Ta = 25°C T = 2856K
30
0
10 2
Collector power dissipation
Collector photo current
Collector photo current
120
12
100 lx
10
80
8 50 lx 4 10 lx
1
40
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10 1
1
10
10 2
10 3
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Illuminance L (lx)
2
PNZ107, PNZ108
Phototransistors
ICEO -- Ta
10 2 VCE = 10V 10 2
ICE(L) -- Ta
ICE(L) (mA)
VCE = 10V L = 100 lx T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
10
ICEO (µA)
Collector photo current
Dark current
10
10 1
Relative sensitivity
1
S (%)
1 40
80
60
40
10 2
20
10 3 20
0
20
40
60
80
100
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 10° 20° 10 4
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 4
tf -- ICE(L)
VCC = 10V Ta = 25°C
Relative sensitivity S(%)
30°
10 3
10 3
tr (µs)
40° 50° 60° 70° 80° 90°
10 2 RL = 1k 500 10 100
tf (µs)
10 2 RL = 1k 10 500 100 1
Rise time
1
10 1 10 2
Fall time
10 2
10 1
1
10
10 1 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
3
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