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Details, datasheet, quote on part number:PN108F
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| Part: | PN108F |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.4 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 2 ;; Q Typ.(deg) = 40 ;; Package = MTGFR103-002 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN108F datasheet File size : 352 kB |
| Request For quote: | Find where to buy PN108F
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Datasheet text preview:
Phototransistors
PNZ107F, PNZ108F (PN107F, PN108F)
Silicon NPN Phototransistors
PNZ107F
Unit : mm
ø4.6±0.15 Glass window
For optical control systems Features
Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) Signal mixing capability using base pin (PNZ108F) TO-18 standard type package
4.5±0.2 12.7 min.
2-ø0.45±0.05 2.54±0.25
1. 0 0± .2 5
45±
0± 0
.1
3°
1.
21
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature
*
ø5.75 max.
Symbol VCEO V CBO
*
Ratings 20 30 3 5 30 150 25 to +85 30 to +100
Unit V V V V mA mW °C °C
4.5±0.2
1: Emitter 2: Collector
PNZ108F
ø4.6±0.15
Unit : mm
Glass window
VECO V E B O* IC PC Topr Tstg
12.7 min.
3-ø0.45±0.05 2.54±0.25
PNZ108F only
1.
0 0± .2
5
45±
0± 0
.1
3°
1.
3 21 1: Emitter 2: Base 3: Collector
ø5.75 max.
Note) The part numbers in the parenthesis show conventional part number.
1
PNZ107F, PNZ108F
Phototransistors
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol ICEO ICE(L) P tr * 2 tf * 2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 100 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100 ICE(L) = 1mA, L = 1000 lx*1
min 0.4
typ 0.05 900 40 8 9 0.3
max 2 4
Unit µA mA nm deg. µs µs
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
PC -- Ta
200 12
ICE(L) -- VCE
10 2
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
ICE(L) (mA)
160
10
Ta = 25°C 1000 lx T = 2856K 900 lx L= 800 lx 700 lx 1500 lx 600 lx 500 lx 400 lx
10
Collector power dissipation
8
Collector photo current
Collector photo current
120
6
1
300 lx
80
4
200 lx
10 1
40
2
100 lx 50 lx 10 lx 24
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
10 2
1
10
10 2
10 3
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Illuminance L (lx)
2
Phototransistors
PNZ107F, PNZ108F
ICEO -- Ta
10 2 VCE = 10V 10
ICE(L) -- Ta
ICE(L) (mA)
VCE = 10V L = 100 lx T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
10
ICEO (µA)
Collector photo current
Dark current
1
10 1
Relative sensitivity
1
S (%)
10 1 40
80
60
40
10 2
20
10 3 20
0
20
40
60
80
100
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 20 10° 20° 10 4
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 4
tf -- ICE(L)
VCC = 10V Ta = 25°C
S (%)
30°
10 3
10 3
Relative sensitivity
tr (µs)
40° 50° 60° 70° 80° 90°
10 2 RL = 1k 10 500 100 1
tf (µs)
10 2 RL = 1k 10 500 100 1
Rise time
10 1 10 2
Fall time
10 2
10 1
1
10
10 1 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
3
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