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Details, datasheet, quote on part number:PN109F
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| Part: | PN109F |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.3 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 2 ;; Q Typ.(deg) = 40 ;; Package = MTGFR103-002 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN109F datasheet File size : 295 kB |
| Request For quote: | Find where to buy PN109F
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Datasheet text preview:
Phototransistors
PNZ109F (PN109F)
Silicon NPN Phototransistor
Unit : mm
For optical control systems Features
Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : p = 900 nm (typ.) Fast response : tr = 8 µs (typ.) Long lifetime, high reliability
4.5±0.2
ø4.6±0.15
Glass window
12.7 min.
3-ø0.45±0.05 2.54±0.25
2 0. 0± 1. 1. 0± 0. 15
45± 3°
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V CBO V ECO V EBO IC PC Topr Tstg Ratings 20 30 3 5 30 150 25 to +85 30 to +100 Unit V V V V mA mW °C °C
3 21 1: Emitter 2: Base 3: Collector
ø5.75 max.
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol ICEO ICE(L) P tr*2 tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA RL = 100 ICE(L) = 1mA, L = 1000 lx*1 lx*1
min 0.3
typ 0.05 900 40 8 9 0.3
max 2
Unit µA mA nm deg. µs µs
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ109F
PC -- Ta
200 12
ICE(L) -- VCE
ICE(L) (mA) ICE(L) (mA)
Ta = 25°C T = 2856K 10 L = 1000 lx 8 900 lx 800 lx 700 lx 600 lx 500 lx 400 lx 4 300 lx 200 lx 2 100 lx 50 lx 10 lx 20 24 10 3
ICE(L) -- L
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
160
10 2
Collector power dissipation
Collector photo current
6
80
Collector photo current
120
10
1
40
10 1
0 20
0
20
40
60
80
100
0
0
4
8
12
16
10 2
1
10
10 2
10 3
10 4
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 2 VCE = 10V 10
ICE(L) -- Ta
ICE(L) (mA)
VCE = 10V L = 100 lx T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
10
ICEO (µA)
Collector photo current
Dark current
1
10 1
Relative sensitivity
1
S (%)
10 1 40
80
60
40
10 2
20
10 3 20
0
20
40
60
80
100
0
40
80
120
0 600
700
800
900
1000 1100 1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 10° 20° 10 4
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 4
tf -- ICE(L)
VCC = 10V Ta = 25°C
80 70 60 50 40 30 20
Relative sensitivity S (%)
90
30°
10 3
10 3
tr (µs)
40° 50° 60° 70° 80° 90°
10 2 RL = 1k 10 500 100 1
tf (µs)
10 2 RL = 1k 10 500 100 1
Rise time
10 1 10 2
Fall time
10 2
10 1
1
10
10 1 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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