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Details, datasheet, quote on part number:PN109L
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| Part: | PN109L |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 3.5 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 2 ;; Q Typ.(deg) = 10 ;; Package = MTGLR103-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN109L datasheet File size : 56 kB |
| Request For quote: | Find where to buy PN109L
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Datasheet text preview:
Phototransistors
PNZ109L (PN109L)
Silicon NPN Phototransistor
ø4.6±0.15
Unit : mm
Glass lens
For optical control systems Features
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx)
12.7 min. 6.3±0.3
Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : p = 900 nm (typ.) Fast response : tr = 5 µs (typ.) Long lifetime, high reliability
3-ø0.45±0.05 2.54±0.25
1. 0± 0. 2 15
45±
0±
0.
3°
1.
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V CBO V ECO V EBO IC PC Topr Tstg Ratings 20 30 3 5 30 150 25 to +85 30 to +100 Unit V V V V mA mW °C °C
3 21 1: Emitter 2: Base 2: Collector
ø5.75 max.
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol I CEO I CE(L) P tr * 2 tf
*2
Conditions VCE = 10V VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100 ICE(L) = 1mA, L = 500 lx*1 lx*1
min 3.5
typ 0.05 900 10 5 6 0.3
max 2
Unit µA mA nm deg. µs µs
VCE(sat)
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ109L
PC -- Ta
200 20
ICE(L) -- VCE
Ta = 25°C 500 lx T = 2856K 300 lx 200 lx 10 3
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
ICE(L) (mA)
1000 lx 16
160
10 2
Collector power dissipation
Collector photo current
100 lx 8 50 lx 4 L = 10 lx
80
Collector photo current
120
12
10
1
40
10 1
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10 2
1
10
10 2
10 3
10 4
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 2 VCE = 10V 10 2
ICE(L) -- Ta
ICE(L) (mA)
VCE = 10V L = 100 lx T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
10
ICEO (µA)
Collector photo current
Dark current
10
10 1
Relative sensitivity
0 40 80 120
1
S (%)
1 40
80
60
40
10 2
20
10 3 20
0
20
40
60
80
100
0 600
700
800
900
1000 1100 1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 10° 20° 10 4
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 4
tf -- ICE(L)
VCC = 10V Ta = 25°C
Relative sensitivity S (%)
30°
10 3
10 3
tr (µs)
40° 50° 60° 70° 80° 90°
10 2 RL = 1k 10 500 100 1
tf (µs)
10 2 RL = 1k 10 500 100 1
Rise time
10 1 10 2
Fall time
10 2
10 1
1
10
10 1 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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