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Details, datasheet, quote on part number:PN120S-MC
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| Part: | PN120S-MC |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; LLX = 2 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 3µA ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.5 ;; Q Typ.(deg) = 50 ;; Package = CTRLR102-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN120S-MC datasheet File size : 364 kB |
| Request For quote: | Find where to buy PN120S-MC
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Datasheet text preview:
Phototransistors
PNZ120S (PN120S)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
4.1±0.3 2.0±0.2 12.5 min.
ø3.0±0.2
Can be combined with LN62S to form an optical controller Features
High sensitivity Wide directional sensitivity for easy use Fast response : tr, tf = 3 µs (typ.) Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 30 5 20 50 25 to +85 30 to +100 Unit V V mA mW °C °C
2 1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO I CE(L)1 I CE(L)2 P tr, tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 2 lx*1 VCE = 10V, L = 500 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100 ICE(L) = 1mA, L = 1000 lx*1
min 3
typ 5
*3 *3
max 500
Unit nA µA mA nm deg. µs
800 50 3 0.2 0.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
*3 I CE(L)
50
Classifications
Class ICE(L)1 (µA) ICE(L) 2 (mA)
QL 3 to 16 5 typ.
RL 10 to 30 6 typ.
SL >24 8 typ.
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ120S
PC -- Ta
60 10
ICE(L) -- VCE
L =1500 lx Ta = 25°C T = 2856K 10
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
50
ICE(L) (mA)
8
1200 lx 1000 lx 900 lx 800 lx 700 lx 600 lx
1
Collector power dissipation
40
Collector photo current
Collector photo current
6
30
10 1
4
20
500 lx 400 lx 300 lx
10 2
10
2
200 lx 100 lx
0 20
0
20
40
60
80
100
0
0
8
16
24
32
10 3
1
10
10 2
10 3
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 4 VCE = 10V 10 3 10 2
ICE(L) -- Ta
VCE = 10V T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (mA)
10 L = 500 lx 1
ICEO (nA)
10 2
S (%) Relative sensitivity
80
Dark current
10
Collector photo current
60
10 1
40
1
10 1
10 2
2 lx
20
10 2 20
0
20
40
60
80
100
10 3 20
0
20
40
60
80
100
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 20 10° 20° 10 3
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 3
tf -- ICE(L)
VCC = 10V Ta = 25°C
Relative sensitivity S (%)
30°
10 2
10 2 RL = 1k
tr (µs)
tf (µs)
RL = 1k 10 500 100 1
40° 50° 60° 70° 80° 90°
10
500 100
Rise time
1
10 1
Fall time
10 2
10 1
10 2 10 2
10 1
1
10
10 2 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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