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Details, datasheet, quote on part number:PN121S
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| Part: | PN121S |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 1000 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.12 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.1 ;; Q Typ.(deg) = 30 ;; Package = CTRLR102-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN121S datasheet File size : 353 kB |
| Request For quote: | Find where to buy PN121S
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Datasheet text preview:
Phototransistors
PNZ121S (PN121S)
Silicon NPN Phototransistor
Unit : mm
For optical control systems Features
Stable operations in high illuminance region Low dark current
12.5 min. 4.1±0.3 2.0±0.2
ø3.0±0.2
Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 20 5 10 50 25 to +85 30 to +100 Unit V V mA mW °C °C
2 1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time
*1
Symbol ICEO ICE(L) P tr*2 tf*2
*3
Conditions VCE = 10V VCE = 10V, L = 1000 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 lx*1
min 120
typ 1 800 30 1 1.3
max 100 280
Unit nA µA nm deg. µs µs
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
*3 I CE(L)
50
Classifications Class Q 120 to180 Black R 160 to 200 Red S 180 to 235 Green T 210 to 280 --
ICE(L) (µA) Color indication
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ121S
PC -- Ta
60 600
ICE(L) -- VCE
10 4 Ta = 25°C T = 2856K
ICE(L) -- L
ICE(L) (µA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
50
ICE(L) (µA)
500 L =2000 lx 1750 lx 300 1500 lx 1250 lx 200 1000 lx 750 lx 100 500 lx 250 lx
10 3
Collector power dissipation
40
400
Collector photo current
Collector photo current
30
10 2
20
10
10
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
1 10
10 2
10 3
10 4
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 3 VCE = 10V 10 3
ICE(L) -- Ta
VCE = 10V T = 2856K L = 1500 lx 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (µA)
ICEO (nA)
10 2
1000 lx
S (%) Relative sensitivity
80
Dark current
10
Collector photo current
60
10 2
40
1
20
10 1 20
0
20
40
60
80
100
10 20
0
20
40
60
80
100
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 10° 20° 10 2
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 2
tf -- ICE(L)
VCC = 10V Ta = 25°C
80 70 60 50 40 30 20
Relative sensitivity S (%)
90
30°
10
10
tr (µs)
40° 50° 60° 70° 80° 90°
RL = 1k 1 500 100
tf (µs)
RL = 1k 1 500 100
Rise time
10 1
Fall time
10 1
10 2 10 2
10 1
1
10
10 2 10 2
10 1
1
10
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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