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Details, datasheet, quote on part number:PN123S
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Datasheet text preview:
Phototransistors
PNZ123S (PN123S)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
4.1±0.3 2.0±0.2 12.5 min.
ø3.0±0.2
Can be combined with LN62S to form an photo interrupter Features
High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 20 5 10 50 25 to +85 30 to +100 Unit V V mA mW °C °C
2
1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time
*1 *2
Symbol ICEO ICE(L) P tr*2 tf*2 VCE = 10V
Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100
min 400
typ 1 800 30 3.5 5
max 100 700
Unit nA µA nm deg. µs µs
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ123S
PC -- Ta
60 1600
ICE(L) -- VCE
10 4 Ta = 25°C T = 2856K
ICE(L) -- L
ICE(L) (µA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
50
ICE(L) (µA)
1200
L =2000 lx 1750 lx 1500 lx
10 3
Collector power dissipation
40
Collector photo current
Collector photo current
30
800 1250 lx 1000 lx 400 750 lx 500 lx 250 lx
10 2
20
10
10
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
1 10
10 2
10 3
10 4
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 3 VCE = 10V 10 4
ICE(L) -- Ta
VCE = 10V T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (µA)
ICEO (nA)
10 2
Dark current
10
Collector photo current
10 3 1000 lx
Relative sensitivity
L = 1500 lx
S (%)
10 2 20 0 20 40 60 80 100
80
60
40
1
20
10 1 20
0
20
40
60
80
100
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 10° 20° 10 3
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 3
tf -- ICE(L)
VCC = 10V Ta = 25°C
80 70 60 50 40 30 20
Relative sensitivity S (%)
90
30°
10 2
10 2
tr (µs)
40° 50° 60° 70° 80° 90°
Rise time
RL = 1k 500
Fall time
10
tf (µs)
10
RL = 1k
1
100
500 1
100
10 1 10 2
10 1
1
10
10 1 10 2
10 1
1
10
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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