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Details, datasheet, quote on part number:PN147
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| Part: | PN147 |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 2 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 3µA ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.5 ;; Q Typ.(deg) = 24 ;; Package = LTTLW102-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN147 datasheet File size : 327 kB |
| Request For quote: | Find where to buy PN147
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Datasheet text preview:
Phototransistors
PNZ147 (PN147)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5±0.1
Features
High sensitivity Wide spectral sensitivity, matched to GaAs LEDs Fast response : tr, tf = 3 µs (typ.)
1.05±0.1
Type number : Emitter mark (Green) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2
1
°
2.2±0.15 (0.7) 0.15 (0.7)
45
1.8
2.8±0.2 1.8
Small size designed for easier mounting to printed circuit board
2.8±0.2
R0.9
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 20 5 20 50 25 to +85 30 to +100 Unit V V mA mW °C °C
0.85 ± 0.15
1: Collector 2: Emitter
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO IC E ( L ) 1 * 3 I CE(L)2 P tr, tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 2 lx*1 VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100 ICE(L) = 1mA, L = 1000 lx*1 lx*1
min 3
typ 0.01 12 3.5 800 24 3 0.2
max 0.5
Unit µA µA mA nm deg.
10 0.5
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
*3 I
CE(L)
Classifications
Class ICE(L) (µA)
Q 3.0 to 11.0
R 7.0 to 24.0
S >16.0
Note) The part number in the parenthesis shows conventional part number.
0.4±0.1
µs V
1
Phototransistors
PNZ147
PC -- Ta
60 20
ICE(L) -- VCE
Ta = 25°C T = 2856K 10 5
ICE(L) -- L
ICE(L) (µA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
50
ICE(L) (mA)
16 L =1500 lx
10 4
Collector power dissipation
40
Collector photo current
1000 lx
Collector photo current
12
30
10 3
8 500 lx 4
20
10 2
10
250 lx 100 lx
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10
1
10
10 2
10 3
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
1 VCE = 10V 10 2
ICE(L) -- Ta
VCE = 10V T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (mA)
ICEO (µA)
10 1
10
S (%) Relative sensitivity
80
Dark current
10 2
Collector photo current
60
40
1
10 3
20
10 4 20
0
20
40
60
80
100
10 1 40
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 10° 20° 10 2
tr , tf -- ICE(L)
VCC = 10V Ta = 25°C RL = 1k 500 100 1
Relative sensitivity S (%)
90 80 70 60 50 40 30 20
30°
tr , tf (µs) Rise time, Fall time
10
40° 50° 60° 70° 80° 90°
10 1
10 2 10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
2
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