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Details, datasheet, quote on part number:PN150L
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| Part: | PN150L |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 500 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 1 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 1 ;; Q Typ.(deg) = 35 ;; Package = LSTLR102-003 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN150L datasheet File size : 55 kB |
| Request For quote: | Find where to buy PN150L
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Datasheet text preview:
Phototransistors
PNZ150L (PN150L)
Silicon NPN Phototransistor
Unit : mm
ø3.5±0.2
4.8±0.3 2.4 2.4 Not soldered
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package
4.5±0.3
4.2±0.3 2.3 1.9
42.7±1.0 2.2 14.5 2.95
1.0
2-1.12 2-0.45±0.15 0.4±0.15 2-0.6±0.15 2-0.45±0.15
1.2
1
2 2.54 R1.75
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO IC PC Topr Tstg Ratings 20 20 100 25 to +85 30 to +100 Unit V mA mW °C °C
1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Sensitivity to infrared emitters Collector saturation voltage Peak sensitivity wavelength Response time Acceptance half angle
*1 *2
Symbol ICEO SIR *1 VCE(sat) P tr, tf*2 VCEO = 10V
Conditions VCE = 10V, H = 15µW/cm2 VCE = 10V, H = 15µW/cm2 VCEO = 10V VCC = 10V, ICE(L) = 5mA, RL = 100 Measured from the optical axis to the half power point
min 16
typ 0.01 0.2 800 4 35
max 0.2 0.5
Unit µA µA V nm µs deg.
Measurements were made using infrared light ( = 940 nm) as a light source. Response time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ150L
PC -- Ta
120 20
ICE(L) -- VCE
Ta = 25°C T = 2856K 10 2
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
100
ICE(L) (mA)
16 L = 2000 lx 1750 lx 1500 lx 1250 lx 1000 lx 8 750 lx 4 500 lx 250 lx 0 100 lx 0 4 8 12 16 20 24
10
Collector power dissipation
80
Collector photo current
60
Collector photo current
12
1
10 1
40
20
10 2
0 20
0
20
40
60
80
100
10 3
1
10
10 2
10 3
10 4
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICE(L) -- Ta
10 2 VCE = 10V T = 2856K 10
ICEO -- Ta
VCE = 10V 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (mA)
ICEO (µA)
1
S (%) Relative sensitivity
80
Collector photo current
60
L = 1000 lx 10 500 lx
Dark current
10 1
40
10 2
20
1 40
0
40
80
120
10 3 40
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 10° 20° 10 4
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 4
tf -- ICE(L)
VCC = 10V Ta = 25°C
80 70 60 50 40 30 20
Relative sensitivity S (%)
90
30°
10 3
10 3
tr (µs)
40° 50° 60° 70° 80° 90°
10 2 RL = 1k 10 500 100 1
tf (µs) Fall time
10 2 RL = 1k 10 500 100 1
Rise time
10 1 10 2
10 1
1
10
10 2
10 1 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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