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Details, datasheet, quote on part number:PN155
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| Part: | PN155 |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 100 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.05 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 1 ;; Q Typ.(deg) = 70 ;; Package = LSTFR102-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN155 datasheet File size : 50 kB |
| Request For quote: | Find where to buy PN155
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Datasheet text preview:
Phototransistors
PNZ155 (PN155)
Silicon NPN Phototransistor
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
2.1±0.15 1.6±0.15 0.8±0.1
Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current
12.8 min. 3.9±0.25
4.5±0.15 3.5±0.15
Flat type plastic package
(2.95)
2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.2
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 20 5 10 100 25 to +85 30 to +100 Unit V V mA mW °C °C
1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO ICE(L) P tr, tf*2 V CE(sat)
*1 *1
Conditions VCE = 10V VCE = 10V, L = 100 lx VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 ICE(L) = 1mA, L = 1000 lx
min 0.05
typ 0.01 0.2 800 70 4 0.2
max 1
Unit µA mA nm deg. µs
0.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ155
PC -- Ta
120 10 2
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K 10
ICEO -- Ta
VCE = 10V
PC (mW)
100
Collector power dissipation
80
Collector photo current
1
ICEO (µA) Dark current
1 10 10 2 10 3 10 4
10
1
60
10 1
10 1
40
10 2
20
10 2
0 20
0
20
40
60
80
100
10 3
10 3 40
0
40
80
120
Ambient temperature Ta (°C )
Illuminance L (lx)
Ambient temperature Ta (°C )
Spectral sensitivity characteristics
100 VCE = 10V Ta = 25°C 10 4
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 4
tf -- ICE(L)
VCC = 10V Ta = 25°C
S (%)
80 10 3 10 3
tr (µs)
Relative sensitivity
60
tf (µs)
10 2 RL = 1k 10 500 100 1
10 2 RL = 1k 10 500 100 1
Rise time
40
20
Fall time
0 200
400
600
800
1000
1200
10 1 10 2
10 1
1
10
10 2
10 1 10 2
10 1
1
10
10 2
Wavelength (nm)
Collector photo current ICE(L) (mA)
Collector photo current ICE(L) (mA)
2
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