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Details, datasheet, quote on part number:PN166
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| Part: | PN166 |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = H=15µW/cm2 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.003(SIR) ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.2 ;; Q Typ.(deg) = 35 ;; Package = LSTLR102NC-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN166 datasheet File size : 48 kB |
| Request For quote: | Find where to buy PN166
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Datasheet text preview:
Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5±1.0 0.8 0.5 max. Gate the rest
Unit : mm
2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4)
2.0 0.7
2.5±0.2 1.7
Ultraminiature, thin side-view type package
2-0.7
2-0.45
0.15
2
1 2.0
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO IC PC Topr Tstg Ratings 20 20 50 25 to +65 30 to +85 Unit V mA mW °C °C
1: Collector 2: Emitter
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol ICEO SIR tr*2 tf*2 VCE(sat)
*1
Conditions VCE = 10V VCE = 10V, H = VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100 ICE(L) = 10µA, H = 15µW/cm2 15µW/cm2
min 3
typ
max 0.2
Unit µA µA nm deg. µs µs
P
850 35 4 4 0.5
V
Measurements were made using infrared light ( = 940 nm) as a light source. Switching time measuring circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNA1601M
PC -- Ta
60 2.0
ICE(L) -- VCE
Ta = 25°C T = 2856K L = 1000 lx 10
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
50
ICE(L) (mA)
1.6
1
Collector power dissipation
40
Collector photo current
Collector photo current
1.2
30
10 1
500 lx 0.8
20
10 2
10
0.4
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10 3
1
10
10 2
10 3
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 VCE = 10V 10
ICE(L) -- Ta
VCE = 10V T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (mA)
ICEO (nA)
1
1
S (%) Relative sensitivity
0 40 80 120
80
Dark current
10 1
Collector photo current
60
40
10 1
10 2
20
10 3 40
0
40
80
120
10 2 40
0 600
700
800
900
1000 1100 1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 20 10° 20° 10 3
tr -- ICE(L)
VCE = 10V Ta = 25°C 10 3
tf -- ICE(L)
VCE = 10V Ta = 25°C
Relative sensitivity S (%)
30°
10 2
10 2
tr (µs)
tf (µs)
40° 50° 60° 70° 80° 90°
10
RL = 1k 500 100
10
RL = 1k 500 100
Rise time
Fall time
1
1
10 1
10 1
10 2 10 2
10 1
1
10
10 2
10 2 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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