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Details, datasheet, quote on part number:PN202S
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| Part: | PN202S |
| Category: | Optoelectronics => Photosensors => Phototransistors => Photodarlingtons |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 20 ;; LLX = 2 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.2 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.(µA) = 0.5 ;; Q Typ.(deg) = 30 ;; Package = CTRLR102-001 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PN202S datasheet File size : 350 kB |
| Request For quote: | Find where to buy PN202S
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Datasheet text preview:
Darlington Phototransistors
PNZ202S (PN202S)
Darlington Phototransistor
Unit : mm
For optical control systems Features
Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes
12.5 min. 4.1±0.3 2.0±0.2
ø3.0±0.2
Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 20 5 30 100 25 to +80 30 to +100 Unit V V mA mW °C °C
2 1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO ICE(L) P tr, tf*2 V CE(sat)
*3
Conditions VCE = 10V VCE = 10V, L = 2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100 ICE(L) = 1mA, L = 100 lx*1 lx*1
min 0.2
typ 0.1 800 30 150 0.7
max 0.5 5
Unit µA mA nm deg. µs
1.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;
*3 I CE(L)
Classifications Class Q 0.2 to 0.8 R 0.6 to 1.65 S 1.35 to 5 Note) The part number in the parenthesis shows conventional part number.
ICE(L) (mA)
;;
50
RL
1
PNZ202S
Darlington Phototransistors
PC -- Ta
120 24
ICE(L) -- VCE
10 3
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
ICE(L) (mA)
Ta = 25°C T = 2856K 20 PC = 100mW L = 30 lx 16 20 lx 12 10 lx 8 5 lx 4 2 lx 1 lx 0 4 8 12 16 20 24
100
10 2
Collector power dissipation
80
Collector photo current
Collector photo current
60
10
40
1
20
0 20
0
20
40
60
80
100
0
10 1
1
10
10 2
10 3
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICE(L) -- Ta
10 2 VCE = 10V 10 2
ICEO -- Ta
100 VCE = 10V
Spectral sensitivity characteristics
Ta = 25°C
ICE(L) (mA)
10
10
ICEO (µA)
Collector photo current
10 1
10 1
Relative sensitivity
0 20 40 60 80 100
1
1
S (%)
10 2 10 3 20
80
60
Dark current
40
10 2
20
10 3 20
0
20
40
60
80
100
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 Sig.IN 90 10° 20°
tr -- ICE(L)
VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50
tf -- ICE(L)
VCC Sig. OUT RL 90% 10%
Relative sensitivity S (%)
80 70 60 50 40 30 20
;; ;
30°
tr (µs)
40° 50° 60° 70° 80° 90°
Rise time
500 100 10 2
Fall time
10 3
RL = 1k
tf (µs)
;
10 3 10 2 10 10 2 10 1
Sig. OUT 50
tr
td
tf
tr
td
tf
RL = 1k 500 100
10 10 2
VCC = 10V Ta = 25°C 10 1 1 10
VCC = 10V Ta = 25°C 1 10
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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