|
Details, datasheet, quote on part number:PNA1605FPN116
| |
Datasheet text preview:
Phototransistors
PNA1605F (PN116)
Silicon NPN Phototransistor
Unit : mm
1.5±0.2
For optical control systems Features
High sensitivity Wide directional sensitivity, matched to GaAs LEDs : = 70 deg. (typ.) Fast response : tr, tf = 8 µs (typ.) Side-view type package
4.5±0.15 3.5±0.15
Not soldered 2.0
2.1±0.15 1.6±0.15 0.8±0.1
12.5 min. 10 min.
3.9±0.25 (2.4)
3-0.45±0.2 0.45±0.2
1.27
1.27
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V CBO V ECO V EBO IC PC Topr Tstg Ratings 20 30 5 5 10 100 25 to +85 30 to +100 Unit V V V V mA mW °C °C
Photodetectors
1 23 1: Emitter 2: Collector 3: Base
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol ICEO ICE(L) P tr*2 tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA RL = 100 ICE(L) = 1mA, L = 1000 lx*1 lx*1
min 0.2
typ 0.05 0.8 900 70 8 9 0.3
max 2
Unit µA mA nm deg. µs µs
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
RL
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNA1605F
PC -- Ta
120 10
ICE(L) -- VCE
L =1000 lx 900 lx Ta = 25°C T = 2856K 800 lx 700 lx 6 600 lx 500 lx 4 400 lx 300 lx 2 200 lx 100 lx 10 3
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
100
ICE(L) (mA)
8
10 2
Collector power dissipation
80
Collector photo current
60
Collector photo current
10
1
40
20
10 1
0 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10 2
1
10
10 2
10 3
10 4
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO -- Ta
10 2 VCE = 10V 10 10 2
ICE(L) -- Ta
ICE(L) (mA)
VCE = 10V L = 100 lx T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICEO (µA)
1
10
S (%) Relative sensitivity
80
Dark current
10 1
Collector photo current
60
40
10 2
1
10 3
20
10 4 20
0
20
40
60
80
100
10 1 40
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 80 60 40 20 10° 20° 30° 40° 10 3
tr -- ICE(L)
VCC = 10V Ta = 25°C 10 3
tf -- ICE(L)
VCC = 10V Ta = 25°C
Relative sensitivity S (%)
50° 60° 10 2 10 2 RL = 1k 10 500 100 1 RL = 1k 10 500 100 1
tr (µs)
70° 80° 90°
Rise time
10 1
Fall time
10 2
tf (µs)
10 1
10 2 10 2
10 1
1
10
10 2 10 2
10 1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
|
|
