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Details, datasheet, quote on part number:PNA1801L
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| Part: | PNA1801L |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | V<SMALL><SUB>CEO</SUB></SMALL>(V) = 30 ;; LLX = 500 ;; I<SMALL><SUB>CE(L)</SUB></SMALL>min.(mA) = 0.8 ;; I<SMALL><SUB>CEO</SUB></SMALL>max.() = 0.5 ;; Q Typ.(deg) = 30 ;; Package = LT3LR1N02-002 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PNA1801L datasheet File size : 338 kB |
| Request For quote: | Find where to buy PNA1801L
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Datasheet text preview:
Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
Unit : mm
Not soldered 2.0 max.
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package
15.0±1.0 4.5±0.3
ø3.8±0.2 ø3.0±0.2
5.0±0.2 0.6
2-0.8 max. 2-0.5±0.1 2 0.5±0.1
1.0
(1.5)
1 2.54
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 30 5 20 100 25 to +85 30 to +100 Unit V V mA mW °C °C
1.7
1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO ICE(L) P tr, tf*2 V CE(sat) VCE = 10V
Conditions VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 ICE(L) = 1mA, L = 1000 lx*1 lx*1
min 0.8
typ 0.005 3 800 35 4 0.2
max 0.5
Unit µA mA nm deg. µs
0.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
;;; ; ;;
50
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNA1801L
PC -- Ta
120 20
ICE(L) -- VCE
Ta = 25°C T = 2856K 10 3
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
100
ICE(L) (mA)
16 L = 2000 lx 1750 lx 1500 lx 1250 lx 1000 lx 8 750 lx 4 500 lx 250 lx 0 100 lx 0 4 8 12 16 20 24
10 2
Collector power dissipation
80
Collector photo current
60
Collector photo current
12
10
1
40
20
10 1
0 20
0
20
40
60
80
100
10 2
1
10
10 2
10 3
10 4
Ambient temperature Ta (°C )
Collector to emitter voltage VCE (V)
Illuminance L (lx)
ICEO -- Ta
10 3 VCE = 10V 10 2
ICE(L) -- Ta
VCE = 10V T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (mA)
ICEO (nA)
10 2
10
L = 1000 lx 500 lx
S (%) Relative sensitivity
80
Dark current
10
Collector photo current
60
40
1
1
20
10 1 40
0
40
80
120
10 1 40
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature Ta (°C )
Ambient temperature Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 90 80 70 60 50 40 30 20 10° 20° 10 4
tr -- ICE(L)
Ta = 25°C 10 4
tf -- ICE(L)
Ta = 25°C
Relative sensitivity S (%)
30°
10 3
10 3
tr (µs)
40° 50° 60° 70° 80° 90°
tf (µs) Fall time
10 2 RL = 1k 10 500 100 1
10 2 RL = 1k 10 500 100 1
Rise time
10 1 10 2
10 1
1
10
10 2
10 1 10 2
10 1
1
10
10 2
Collector photo current ICE(L) (mA)
Collector photo current ICE(L) (mA)
2
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