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Details, datasheet, quote on part number:PNA2803M
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| Part: | PNA2803M |
| Category: | Optoelectronics => Photosensors => Phototransistors |
| Description: | Darlington Phototransistor |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PNA2803M datasheet File size : 49 kB |
| Request For quote: | Find where to buy PNA2803M
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Datasheet text preview:
Darlington Phototransistors
PNA2803M
Darlington Phototransistor
Unit : mm
Not soldered 2.0 max.
For optical control systems Features
Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes ø 3 plastic package
ø3.8±0.2 ø3.0±0.2
15.0±1.0 4.5±0.3
5.0±0.2 0.6
2-0.8 max. 2-0.5±0.1 2 0.5±0.1
Absolute Maximum Ratings (Ta = 25°C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol V CEO V ECO IC PC Topr Tstg Ratings 20 5 30 100 25 to +80 30 to +100 Unit V V mA mW °C °C
(1.5) 1.7
1.0
1 2.54
1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO ICE(L) P tr, tf*2 V CE(sat)
*3
Conditions VCE = 10V VCE = 10V, L = 2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 ICE(L) = 1mA, L = 100 lx*1 lx*1
min 0.05
typ
max 0.5 1.5
Unit µA mA nm deg. µs
850 30 150 0.7 1.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
,,
*3 I CE(L)
Classifications Class Q 0.05 to 0.25 R 0.18 to 0.8 S 0.7 to 1.5
ICE(L) (mA)
,,
50
RL
1
PNA2083M
Darlington Phototransistors
PC -- Ta
120 24
ICE(L) -- VCE
10 3
ICE(L) -- L
ICE(L) (mA)
VCE = 10V Ta = 25°C T = 2856K
PC (mW)
100
ICE(L) (mA)
Ta = 25°C T = 2856K 20
10 2
Collector power dissipation
80
16 PC = 100mW L = 20 lx 12 10 lx 8 5 lx 4 2 lx 1 lx 0 4 8 12 16 20 24
Collector photo current
Collector photo current
60
10
40
1
20
0 20
0
20
40
60
80
100
0
10-1 10-1
1
10
102
Ambient temperature
Ta (°C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICE(L) -- Ta
10 VCE = 10V 10 2
ICEO -- Ta
VCE = 10V 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C
ICE(L) (mA)
ICEO (µA)
10
S (%) Relative sensitivity
0 20 40 60 80 100
80
Collector photo current
60
Dark current
1
1
40
10 1
20
10 1 40
0
40
80
120
10 2 20
0 600
700
800
900
1000 1100 1200
Ambient temperature
Ta (°C )
Ambient temperature
Ta (°C )
Wavelength (nm)
Directivity characteristics
0° 100 10° 20° Sig.IN
tr -- ICE(L)
VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50
tf -- ICE(L)
VCC Sig. OUT RL 90% 10%
Relative sensitivity S (%)
90 80 70 60 50 40 30 20
,, ,
30°
tr (µs)
40° 50° 60° 70° 80° 90°
Rise time
500
Fall time
10 3
RL = 1k
tf (µs)
,
10 3 10 2 10 10 2 10 1
Sig. OUT 50
tr
td
tf
tr
td
tf
RL = 1k 500 100 VCC = 10V Ta = 25°C 1 10
10 2
100
10 10 2
VCC = 10V Ta = 25°C 10 1 1 10
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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