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Details, datasheet, quote on part number:PNA3W01L
 
 
Part:PNA3W01L
Category:Optoelectronics => Photosensors => Photodiodes => PIN Photodiodes
Description:V<SMALL><SUB>R</SUB></SMALL>(V) = 30 ;; I<SMALL><SUB>D</SUB></SMALL>max.(nA) = 50 ;; I<SMALL><SUB>L</SUB></SMALL>min.(µA) = 5 ;; L <SMALL><SUB>P</SUB></SMALL>typ.(nm) = 800 ;; T<SMALL><SUB>r</SUB></SMALL>;; T<SMALL><SUB>f</SUB></SMALL>typ.(ns) = 50 ;; Q Typ.(deg) = 24 ;; Package = LTTLW102-001
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download PNA3W01L datasheet   File size : 339 kB
Request For quote:  Find where to buy PNA3W01L
 



Datasheet text preview:
PIN Photodiodes
PNA3W01L (PN307)
PIN Photodiode
Unit : mm
For optical control systems
0.5±0.1
Features
High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : p = 800 nm (typ.)
1.05±0.1
Type number : Emitter mark (Yellow) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2
1
°
2.2±0.15 (0.7) 0.15 (0.7)
45
1.8
2.8±0.2 1.8
Double end type small size package
R0.9
2.8±0.2
Absolute Maximum Ratings (Ta = 25°C)
Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 10 ­25 to +85 ­30 to +100 Unit V mW °C °C
0.85 ± 0.15
1: Cathode 2: Anode
Electro-Optical Characteristics (Ta = 25°C)
Parameter Dark current Photo current Peak sensitivity wavelength Acceptance half angle
*
Symbol ID IL P VR = 10V
Conditions VR = 10V, L = 1000 lx* VR = 10V Measured from the optical axis to the half power point
min 5
typ
max 50
Unit nA µA nm deg.
800 24
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Note) The part number in the parenthesis shows conventional part number.
0.4±0.1
1
PIN Photodiodes
PNA3W01L
PD -- Ta
14 10 3 12 VR = 10V Ta = 25°C T = 2856K
IL -- L
10 3 VR = 10V
ID -- Ta
PD (mW)
IL (µA)
10 2
10 8 6 4 2 0 ­ 20
Power dissipation
10
Photo current
ID (nA) Dark current
1 10 10 2 10 3 10 4
10 2
10
1
1
10 ­1
0
20
40
60
80
100
10 ­2
10 ­1 ­ 40 ­ 20
0
20
40
60
80
100
Ambient temperature Ta (°C )
Illuminance L (lx)
Ambient temperature Ta (°C )
IL -- Ta
160 VR = 10V L = 1000 lx T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25°C 100
Directional characteristics
Ta = 25°C
IL (%)
120
Relative photo current
S (%)
S (%) Relative sensitivity
80
80
80
Relative sensitivity
60
60
40
40
40
20
20
0 ­ 40 ­ 20
0
20
40
60
80
100
0 200
400
600
800
1000
1200
0
80
40
0
40
80
Ambient temperature Ta (°C )
Wavelength (nm)
Angle (deg.)
ID -- VR
10 Ta = 25°C 10 2 Sig.IN
tr , tf -- RL
VR=10V Sig. OUT RL 90% 10%
tr , tf (µs)
;;
10 50
ID (nA)
tr
td
tf
Rise time, Fall time
Dark current
1
1
10 ­1
10 ­1
0
8
16
24
32
10 ­2 10 ­1
1
10
10 2
Reverse voltage VR (V)
External load resistance RL (k)
2